FORKSHEET TRANSISTOR STRUCTURES WITH GATE CUT SPINE

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FORKSHEET TRANSISTOR STRUCTURES WITH GATE CUT SPINE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240113104 titled 'FORKSHEET TRANSISTOR STRUCTURES WITH GATE CUT SPINE

Simplified Explanation

The patent application describes techniques for forming semiconductor devices with a gate cut that passes through multiple semiconductor bodies, creating a forksheet arrangement with a dielectric spine in between the bodies. The gate structure includes a gate dielectric and a gate electrode that extend around each semiconductor body, with the dielectric spine interrupting the gate structure between the bodies.

Explanation of the patent/innovation:

   * Gate cut passes through multiple semiconductor bodies
   * Forms a forksheet arrangement with a dielectric spine in between
   * Gate structure includes gate dielectric and gate electrode around each body
   * Dielectric spine interrupts gate structure between bodies

Potential applications of this technology:

   * Advanced semiconductor devices
   * Nanotechnology applications
   * High-performance electronics

Problems solved by this technology:

   * Improved gate control in semiconductor devices
   * Enhanced performance and efficiency
   * Reduction of parasitic capacitance

Benefits of this technology:

   * Increased device performance
   * Enhanced scalability
   * Improved power efficiency

Potential commercial applications of this technology:

   * Semiconductor manufacturing industry
   * Electronics industry
   * Nanotechnology sector

Possible prior art:

   * Prior art related to gate structures in semiconductor devices
   * Previous techniques for forming forksheet arrangements
   * Research on dielectric spines in nanotechnology

Questions:

1. How does the presence of the dielectric spine impact the overall performance of the semiconductor devices?

  The dielectric spine helps to reduce parasitic capacitance and improve gate control in the devices, leading to enhanced performance and efficiency.

2. What are the specific materials used for the gate dielectric and gate electrode in the gate structure?

  The gate dielectric may include high-k dielectric material, while the gate electrode can be made of conductive materials such as workfunction material and/or gate fill metal.

Original Abstract Submitted

techniques are provided to form semiconductor devices that include a gate cut that passes through a plurality of semiconductor bodies (e.g., nanoribbons or nanosheets) such that the gate cut acts as a dielectric spine in a forksheet arrangement with the semiconductor bodies on either side of the gate cut. in an example, two semiconductor devices in a forksheet arrangement include semiconductor bodies directly on either side of a dielectric spine. a gate structure includes a gate dielectric (e.g., high-k gate dielectric material) and a gate electrode (e.g., conductive material such as workfunction material and/or gate fill metal) that extends around each of the semiconductor bodies of both semiconductor devices. the dielectric spine interrupts the entire height of the gate structure between the two devices and includes dielectric material (e.g., low-k dielectric), and the gate dielectric of the gate structure is not present along sidewalls of the spine between adjacent bodies.

Intel corporation (20240113104). FORKSHEET TRANSISTOR STRUCTURES WITH GATE CUT SPINE simplified abstract

Contents

FORKSHEET TRANSISTOR STRUCTURES WITH GATE CUT SPINE

Organization Name

Inventor(s)