17955677. COMPOSITE CONTACT BETWEEN BACKSIDE POWER ELEMENT AND SOURCE/DRAIN REGION simplified abstract (International Business Machines Corporation)

COMPOSITE CONTACT BETWEEN BACKSIDE POWER ELEMENT AND SOURCE/DRAIN REGION

Organization Name

International Business Machines Corporation

Inventor(s)

Koichi Motoyama of Clifton Park NY (US)

Alexander Reznicek of Troy NY (US)

Tsung-Sheng Kang of Ballston Lake NY (US)

Oscar Van Der Straten of Guilderland Center NY (US)

COMPOSITE CONTACT BETWEEN BACKSIDE POWER ELEMENT AND SOURCE/DRAIN REGION - A simplified explanation of the abstract

This abstract first appeared for US patent application 17955677 titled 'COMPOSITE CONTACT BETWEEN BACKSIDE POWER ELEMENT AND SOURCE/DRAIN REGION

Simplified Explanation

The semiconductor device described in the abstract includes a transistor with a source/drain region and a contact on the source/drain region, as well as a via extending from the contact along a side of the source/drain region to a power element. Both the contact and the via are made up of multiple conductive materials.

• The semiconductor device features a transistor with a source/drain region and a contact.
• A via extends from the contact to a power element.
• The contact and via consist of multiple conductive materials.

Potential Applications

This technology could be applied in:

• Integrated circuits
• Power electronics
• Semiconductor manufacturing

Problems Solved

This technology helps address issues related to:

• Efficient power distribution
• Enhanced transistor performance
• Improved connectivity in semiconductor devices

Benefits

The benefits of this technology include:

• Increased efficiency in power management
• Enhanced overall performance of semiconductor devices
• Improved reliability and durability

Potential Commercial Applications

This technology could be utilized in various commercial applications such as:

• Consumer electronics
• Automotive electronics
• Industrial automation

Possible Prior Art

One possible prior art for this technology could be the use of vias in semiconductor devices to improve connectivity and power distribution.

How does this technology impact the overall cost of semiconductor manufacturing?

This article does not address the potential cost implications of implementing this technology in semiconductor manufacturing processes.

What are the environmental implications of using multiple conductive materials in semiconductor devices?

The article does not discuss the environmental impact of utilizing multiple conductive materials in semiconductor devices.

Original Abstract Submitted

A semiconductor device includes a transistor having a source/drain region and a contact disposed on the source/drain region. The semiconductor device further includes a via extending from the contact along a side of the source/drain region to a power element. The contact and the via each comprise a plurality of conductive materials.