17957887. STACKED SOURCE OR DRAIN CONTACT FLYOVER simplified abstract (Intel Corporation)

STACKED SOURCE OR DRAIN CONTACT FLYOVER

Organization Name

Intel Corporation

Inventor(s)

Sukru Yemenicioglu of Portand OR (US)

Quan Shi of Portland OR (US)

Marni Nabors of Portland OR (US)

Charles H. Wallace of Portland OR (US)

Xinning Wang of Hillsboro OR (US)

Tahir Ghani of Portland OR (US)

Andy Chih-Hung Wei of Yamhill OR (US)

Mohit K. Haran of Forest Grove OR (US)

Leonard P. Guler of Hillsboro OR (US)

Sivakumar Venkataraman of Hillsboro OR (US)

Reken Patel of Portland OR (US)

Richard Schenker of Portland OR (US)

STACKED SOURCE OR DRAIN CONTACT FLYOVER - A simplified explanation of the abstract

This abstract first appeared for US patent application 17957887 titled 'STACKED SOURCE OR DRAIN CONTACT FLYOVER

Simplified Explanation

The abstract describes an integrated circuit with two devices, each having a source or drain region. A conductive source or drain contact connects the two regions, with a dielectric material separating the contact from one of the regions. The devices can be gate-all-around (GAA) structures or finFETs.

• The integrated circuit includes two devices with source or drain regions.
• A conductive contact connects the two regions, with a dielectric material separating the contact from one of the regions.
• The devices can be GAA structures or finFETs.

Potential Applications

This technology could be applied in advanced semiconductor devices, such as high-performance transistors for use in electronics and computing.

Problems Solved

This innovation helps in improving the performance and efficiency of integrated circuits by providing a reliable and efficient way to connect different regions within the circuit.

Benefits

The benefits of this technology include enhanced circuit performance, increased integration density, and improved reliability of the integrated circuits.

Potential Commercial Applications

Potential commercial applications of this technology include advanced processors, memory devices, and other semiconductor products for various electronic devices.

Possible Prior Art

Prior art in the field of semiconductor devices may include similar methods of connecting different regions within an integrated circuit, but this specific approach with a conductive contact and dielectric material may be a novel improvement.

How does this technology compare to existing methods of connecting source or drain regions in integrated circuits?

This article does not provide a direct comparison to existing methods, leaving the reader to wonder about the specific advantages or disadvantages of this approach.

What are the specific performance enhancements achieved by using this conductive contact and dielectric material configuration?

The article does not delve into the specific performance improvements or metrics resulting from the implementation of this technology, leaving a gap in understanding the full impact of this innovation.

Original Abstract Submitted

An integrated circuit includes a first device having a first source or drain region, and a second device having a second source or drain region that is laterally adjacent to the first source or drain region. A conductive source or drain contact includes (i) a lower portion in contact with the first source or drain region, and extending above the first source or drain region, and (ii) an upper portion extending laterally from above the lower portion to above the second source or drain region. A dielectric material is between at least a section of the upper portion of the conductive source or drain contact and the second source or drain region. In an example, each of the first and second devices is a gate-all-around (GAA) device having one or more nanoribbons, nanowires, or nanosheets as channel regions, or is a finFet structure having a fin-based channel region.