17957580. SQUARE ETCH PROFILES IN HETEROGENOUS MATERIALS OF INTEGRATED CIRCUIT DEVICES simplified abstract (Intel Corporation)

SQUARE ETCH PROFILES IN HETEROGENOUS MATERIALS OF INTEGRATED CIRCUIT DEVICES

Organization Name

Intel Corporation

Inventor(s)

Mekha George of Hillsboro OR (US)

Seda Cekli of Portland OR (US)

Kilhyun Bang of Portland OR (US)

Krishna Ganesan of Portland OR (US)

SQUARE ETCH PROFILES IN HETEROGENOUS MATERIALS OF INTEGRATED CIRCUIT DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 17957580 titled 'SQUARE ETCH PROFILES IN HETEROGENOUS MATERIALS OF INTEGRATED CIRCUIT DEVICES

Simplified Explanation

The patent application describes materials and techniques for recessing heterogeneous materials in integrated circuit (IC) dies. A first etch reveals a surface at a desired depth, while a second etch removes material laterally to reveal sidewalls down to the desired depth of the recess. The first etch may be cyclical, and the second etch may be continuous. The etches may occur in the same chamber and be selective to materials with similarities. The recess may have a squared profile and be over transistor structures.

• First etch reveals surface at desired depth
• Second etch removes material laterally to reveal sidewalls
• First etch may be cyclical, second etch may be continuous
• Etches may occur in the same chamber
• Recess may have squared profile
• Recess may be over transistor structures

Potential Applications

The technology described in the patent application could be applied in the manufacturing of integrated circuits, semiconductor devices, and microelectronics.

Problems Solved

This technology solves the problem of recessing heterogeneous materials in IC dies with precision and control, allowing for the creation of complex structures within the die.

Benefits

The benefits of this technology include improved performance and functionality of IC dies, increased efficiency in manufacturing processes, and the ability to create advanced semiconductor devices.

Potential Commercial Applications

The technology could be commercially applied in the semiconductor industry for the production of high-performance integrated circuits and microelectronic devices.

Possible Prior Art

One possible prior art for this technology could be the use of selective etching techniques in semiconductor manufacturing processes to create recessed structures in IC dies.

How does the technology impact the overall cost of manufacturing IC dies?

The article does not provide information on how the technology may affect the cost of manufacturing IC dies. This could be an important factor for companies looking to adopt this innovation.

What are the environmental implications of the materials and techniques used in this technology?

The environmental impact of the materials and techniques used in this technology is not discussed in the article. Understanding the sustainability of the manufacturing process is crucial in today's environmentally conscious world.

Original Abstract Submitted

Materials and techniques for recessing heterogenous materials in integrated circuit (IC) dies. A first etch may reveal a surface at a desired depth, and a second etch may remove material laterally to reveal sidewalls down to the desired depth of the recess. The first etch may be a cyclical etch, and the second etch may be a continuous etch. The first and second etches may occur in a same chamber. The first and second etches may each be selective to materials with similarities. An IC die may have different, substantially coplanar materials at a recessed surface between and below sidewalls of another material. The recess may have squared profile. The recess may be over transistor structures.