18166521. INTEGRATED CIRCUIT DEVICES INCLUDING A VERTICAL FIELD-EFFECT TRANSISTOR AND METHODS OF FORMING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 INTEGRATED CIRCUIT DEVICES INCLUDING A VERTICAL FIELD-EFFECT TRANSISTOR AND METHODS OF FORMING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 INTEGRATED CIRCUIT DEVICES INCLUDING A VERTICAL FIELD-EFFECT TRANSISTOR AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Original Abstract Submitted
INTEGRATED CIRCUIT DEVICES INCLUDING A VERTICAL FIELD-EFFECT TRANSISTOR AND METHODS OF FORMING THE SAME
Organization Name
Inventor(s)
Byounghak Hong of Albany NY (US)
Seunghyun Song of Albany NY (US)
INTEGRATED CIRCUIT DEVICES INCLUDING A VERTICAL FIELD-EFFECT TRANSISTOR AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18166521 titled 'INTEGRATED CIRCUIT DEVICES INCLUDING A VERTICAL FIELD-EFFECT TRANSISTOR AND METHODS OF FORMING THE SAME
Simplified Explanation
The abstract describes a patent application for integrated circuit devices and methods of forming them. These devices include vertical field effect transistors (VFETs) and a diffusion break between different active regions on a substrate.
- The integrated circuit devices have a first active region with a first VFET and a second active region with a second VFET.
- A diffusion break is present between the first and second active regions on the substrate.
- The diffusion break consists of isolation layers and a diffusion break channel region protruding from the substrate.
- The isolation layers are adjacent to the sidewalls of the diffusion break channel region.
Potential Applications
- This technology can be used in the manufacturing of integrated circuits for various electronic devices such as smartphones, computers, and IoT devices.
- It can improve the performance and efficiency of these devices by providing better isolation between different active regions.
Problems Solved
- The diffusion break helps to prevent unwanted diffusion of materials between different active regions, reducing the risk of short circuits and improving the overall reliability of the integrated circuit devices.
- It also allows for better control and optimization of the electrical characteristics of the VFETs.
Benefits
- The integration of VFETs with a diffusion break provides enhanced isolation and improved performance in integrated circuit devices.
- The use of isolation layers and a diffusion break channel region helps to minimize the risk of cross-contamination and improve the overall reliability of the devices.
- This technology enables more efficient and reliable operation of electronic devices, leading to better user experiences and longer device lifetimes.
Original Abstract Submitted
Integrated circuit devices and methods of forming the same are provided. Integrated circuit devices may include a first active region including a first vertical field effect transistor (VFET), a second active region including a second VFET, and a diffusion break between the first active region and the second active region on a substrate. The diffusion break may include first and second isolation layers in the substrate and a diffusion break channel region protruding from a portion of the substrate. The portion of the substrate may be between the first isolation layer and the second isolation layer. In some embodiments, the first and second isolation layers may be adjacent to respective opposing sidewalls of the diffusion break channel region.
