17693204. INTEGRATED CIRCUIT WITH NANOSTRUCTURE TRANSISTORS AND BOTTOM DIELECTRIC INSULATORS simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

INTEGRATED CIRCUIT WITH NANOSTRUCTURE TRANSISTORS AND BOTTOM DIELECTRIC INSULATORS

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Zhi-Chang Lin of Hsinchu (TW)

Chien Ning Yao of Hsinchu (TW)

Shih-Cheng Chen of Hsinchu (TW)

Jung-Hung Chang of Hsinchu (TW)

Tsung-Han Chuang of Hsinchu (TW)

Kuo-Cheng Chiang of Hsinchu (TW)

Chih-Hao Wang of Hsinchu (TW)

INTEGRATED CIRCUIT WITH NANOSTRUCTURE TRANSISTORS AND BOTTOM DIELECTRIC INSULATORS - A simplified explanation of the abstract

This abstract first appeared for US patent application 17693204 titled 'INTEGRATED CIRCUIT WITH NANOSTRUCTURE TRANSISTORS AND BOTTOM DIELECTRIC INSULATORS

Simplified Explanation

The abstract describes an integrated circuit that includes two types of nanostructure transistors and their corresponding source/drain regions. The first nanostructure transistor has multiple semiconductor nanostructures over a substrate, each connected to a source/drain region. The second nanostructure transistor also has multiple semiconductor nanostructures, but only some of them are connected to a second source/drain region.

• The integrated circuit includes two types of nanostructure transistors.
• The first nanostructure transistor has multiple semiconductor nanostructures over a substrate.
• Each semiconductor nanostructure in the first transistor is connected to a source/drain region.
• The second nanostructure transistor also has multiple semiconductor nanostructures.
• Only some of the semiconductor nanostructures in the second transistor are connected to a second source/drain region.

Potential Applications

• This technology can be used in the development of advanced integrated circuits.
• It may find applications in various electronic devices, such as smartphones, computers, and IoT devices.
• The integration of different types of nanostructure transistors can enable improved performance and functionality in electronic devices.

Problems Solved

• The integration of multiple types of nanostructure transistors allows for more complex circuit designs.
• It provides a solution for connecting different types of nanostructures to their respective source/drain regions.
• This technology addresses the need for smaller and more efficient electronic devices.

Benefits

• The integrated circuit offers enhanced performance and functionality due to the inclusion of multiple types of nanostructure transistors.
• It enables the creation of smaller and more compact electronic devices.
• The technology can potentially lead to improved power efficiency and faster processing speeds.

Original Abstract Submitted

An integrated circuit includes a first nanostructure transistor including a plurality of first semiconductor nanostructures over a substrate and a source/drain region in contact with each of the first semiconductor nanostructures. The integrated circuit includes a second nanostructure transistor including a plurality of second semiconductor nanostructures and a second source/drain region in contact with one or more of the second semiconductor nanostructures but not in contact with one or more other second semiconductor nanostructures.