18217012. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
- 1 SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Jong Min Baek of Suwon-si (KR)
Moon Kyun Song of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18217012 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract includes various patterns and connections on a substrate, allowing for efficient electronic functionality. Here are some key points to note:
- The device features a fin-shaped pattern on the substrate, along with a source/drain pattern and contact connections for effective electrical conductivity.
- A buried conductive pattern extends through the substrate, providing additional connectivity for the device.
- Contact connection vias are strategically placed between the source/drain contact and the buried conductive pattern, optimizing the flow of current.
- The width of the contact connection via increases as it moves away from the substrate surface, while the width of the source/drain contact decreases in the same direction.
Potential Applications
This technology could be applied in various electronic devices such as smartphones, tablets, and computers to enhance their performance and efficiency.
Problems Solved
This innovation solves the problem of optimizing electrical connectivity within semiconductor devices, improving their overall functionality and reliability.
Benefits
The benefits of this technology include increased efficiency, improved performance, and enhanced reliability of electronic devices.
Potential Commercial Applications
This technology could be utilized in the semiconductor industry for the production of advanced electronic devices, leading to potential commercial applications in consumer electronics, telecommunications, and computing.
Possible Prior Art
One possible prior art for this technology could be the use of similar patterns and connections in previous semiconductor devices to optimize electrical conductivity and performance.
Unanswered Questions
How does this technology compare to existing semiconductor device designs in terms of efficiency and performance?
This article does not provide a direct comparison with existing semiconductor device designs to evaluate the efficiency and performance improvements offered by this innovation.
What are the potential challenges or limitations of implementing this technology in practical electronic devices?
The article does not address any potential challenges or limitations that may arise when implementing this technology in real-world electronic devices.
Original Abstract Submitted
A semiconductor device a first fin-shaped pattern provided at a first surface of a substrate and extending in a second direction, a first source/drain pattern disposed on the first fin-shaped pattern and connected thereto, a first source/drain contact disposed on the first source/drain pattern and connected thereto, a buried conductive pattern extending through the substrate and connected to the first source/drain contact, a contact connection via disposed between the first source/drain contact and the buried conductive pattern. The contact connection via is directly connected to the first source/drain contact and a back wiring line disposed on a second surface of the substrate and connected to the buried conductive pattern. A width of the contact connection via increases as the contact connection via extends away from the second surface. A width of the first source/drain contact decreases as the first source/drain contact extends away from the second surface of the substrate.
