18157352. Method and Structure for FinFET Isolation simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

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Method and Structure for FinFET Isolation

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Che-Cheng Chang of New Taipei City (TW)

Chih-Han Lin of Hsinchu (TW)

Jr-Jung Lin of Hsinchu (TW)

Method and Structure for FinFET Isolation - A simplified explanation of the abstract

This abstract first appeared for US patent application 18157352 titled 'Method and Structure for FinFET Isolation

Simplified Explanation

The abstract describes a semiconductor device that includes a substrate, a fin protruding from the substrate, and a gate stack over the substrate and engaging the fin. The device also includes a dielectric layer abutting the first end of the fin and spacer features on the sidewalls of the gate stack and on the top surface of the dielectric layer.

  • The semiconductor device includes a fin protruding from the substrate, which allows for increased surface area and improved performance.
  • The gate stack engages the fin, providing a connection between the fin and the substrate.
  • A dielectric layer is placed against the first end of the fin, providing insulation and protection.
  • Spacer features are present on the sidewalls of the gate stack and on the top surface of the dielectric layer, enhancing the performance and functionality of the device.

Potential Applications

  • This semiconductor device can be used in various electronic devices, such as smartphones, tablets, and computers.
  • It can be utilized in the manufacturing of integrated circuits and microprocessors.

Problems Solved

  • The fin protruding from the substrate increases the surface area, allowing for improved performance and functionality.
  • The gate stack engaging the fin provides a secure connection, ensuring proper operation of the device.
  • The dielectric layer and spacer features protect and insulate the fin and other components, preventing damage and enhancing overall performance.

Benefits

  • The increased surface area provided by the fin allows for better heat dissipation and improved electrical conductivity.
  • The secure connection between the fin and the gate stack ensures reliable operation and reduces the risk of failure.
  • The dielectric layer and spacer features enhance the durability and reliability of the device, extending its lifespan.


Original Abstract Submitted

A semiconductor device includes a substrate, a fin protruding from the substrate, and a gate stack over the substrate and engaging the fin. The fin having a first end and a second end. The semiconductor device also includes a dielectric layer abutting the first end of the fin and spacer features disposed on sidewalls of the gate stack and on a top surface of the dielectric layer.

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