18543784. CONTACT OVER ACTIVE GATE STRUCTURES WITH CONDUCTIVE GATE TAPS FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract (Intel Corporation)
CONTACT OVER ACTIVE GATE STRUCTURES WITH CONDUCTIVE GATE TAPS FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION
Organization Name
Inventor(s)
Elliot Tan of Portland OR (US)
CONTACT OVER ACTIVE GATE STRUCTURES WITH CONDUCTIVE GATE TAPS FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION - A simplified explanation of the abstract
This abstract first appeared for US patent application 18543784 titled 'CONTACT OVER ACTIVE GATE STRUCTURES WITH CONDUCTIVE GATE TAPS FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION
Simplified Explanation
The patent application describes Contact over active gate (COAG) structures with conductive gate taps in an integrated circuit structure. Here is a simplified explanation of the innovation:
- Plurality of gate structures above a substrate, each with a gate insulating layer.
- Conductive tap structure protruding through the gate insulating layer in each gate structure.
- Conductive trench contact structures alternating with gate structures, each with a trench insulating layer.
- Interlayer dielectric material above trench and gate insulating layers.
- Opening in the interlayer dielectric material exposing the conductive tap structure.
- Conductive structure in the opening in direct contact with the conductive tap structure.
- Potential Applications
The technology can be applied in the semiconductor industry for advanced integrated circuit structures.
- Problems Solved
This innovation solves the challenge of efficiently making contact with gate structures in integrated circuits.
- Benefits
The technology enables improved performance and reliability of integrated circuits by providing direct contact with gate structures.
- Potential Commercial Applications
The technology can be utilized in the development of high-performance electronic devices, such as smartphones and computers.
- Possible Prior Art
One possible prior art could be the use of traditional contact structures in integrated circuits for making connections with gate structures.
- Unanswered Questions
- How does this technology impact the overall efficiency of integrated circuits?
The technology improves the efficiency of integrated circuits by providing direct contact with gate structures, reducing resistance and improving performance.
- What are the potential cost implications of implementing this technology in semiconductor manufacturing?
The implementation of this technology may lead to increased manufacturing costs initially, but the long-term benefits in terms of performance and reliability may outweigh the initial investment.
Original Abstract Submitted
Contact over active gate (COAG) structures with conductive gate taps are described. In an example, an integrated circuit structure includes a plurality of gate structures above a substrate, each of the gate structures including a gate insulating layer thereon. Each of the plurality of gate structures includes a conductive tap structure protruding through the corresponding gate insulating layer. A plurality of conductive trench contact structures is alternating with the plurality of gate structures, each of the conductive trench contact structures including a trench insulating layer thereon. An interlayer dielectric material is above the trench insulating layers and the gate insulating layers. An opening is in the interlayer dielectric material and exposes the conductive tap structure of one of the plurality of gate structures. A conductive structure is in the opening and is in direct contact with the conductive tap structure of one of the plurality of gate structures.
