18376549. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
- 1 SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Dong Hoon Hwang of Suwon-si (KR)
In Chan Hwang of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18376549 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
A semiconductor device described in the patent application includes a complex structure involving multiple layers of nanosheets, isolation layers, gate electrodes, source/drain regions, and contacts. The device aims to improve performance and efficiency in electronic applications.
- The semiconductor device includes:
* First lower nanosheets * Upper isolation layer on the first lower nanosheets * First upper nanosheets on the upper isolation layer * First upper source/drain region on the first upper nanosheets * Second upper source/drain region on the first upper nanosheets * First gate electrode surrounding the first lower nanosheets, the upper isolation layer, and the first upper nanosheets * First gate cut on a side of the first gate electrode * First through via inside the first gate cut * First upper source/drain contact on and electrically connected to the first upper source/drain region * Second upper source/drain contact on the first upper source/drain region and electrically connecting the second upper source/drain region with the first through via
Potential Applications
The technology described in the patent application could be applied in advanced electronic devices such as smartphones, tablets, laptops, and other portable electronics. It could also find use in high-performance computing systems, sensors, and communication devices.
Problems Solved
This technology addresses the need for improved semiconductor devices with enhanced performance, efficiency, and reliability. By incorporating multiple layers of nanosheets and advanced structures, the device aims to overcome limitations of traditional semiconductor designs.
Benefits
The semiconductor device offers increased speed, reduced power consumption, and higher integration density compared to conventional devices. It enables more efficient electronic systems with improved overall performance and functionality.
Potential Commercial Applications
- Optimizing Semiconductor Devices for Enhanced Performance and Efficiency
Possible Prior Art
There may be prior art related to semiconductor devices with nanosheet structures, advanced gate electrodes, and source/drain regions. Research and patents in the field of semiconductor technology could provide insights into similar innovations.
Unanswered Questions
How does the device handle heat dissipation in high-performance applications?
The patent application does not specifically address the thermal management aspects of the semiconductor device. Further research or testing may be required to understand how heat dissipation is managed in demanding electronic applications.
What are the potential challenges in manufacturing this complex semiconductor device at scale?
While the patent application describes a sophisticated semiconductor structure, it does not delve into the practical challenges of mass production. Issues such as yield rates, production costs, and scalability could impact the commercial viability of the technology.
Original Abstract Submitted
A semiconductor device includes first lower nanosheets; an upper isolation layer on the first lower nanosheets; first upper nanosheets on the upper isolation layer; a first upper source/drain region on the first upper nanosheets; a second upper source/drain region on the first upper nanosheets; a first gate electrode surrounding the first lower nanosheets, the upper isolation layer, and the first upper nanosheets; a first gate cut on a side of the first gate electrode and extending from a lower surface of the first gate electrode to an upper surface of the first gate electrode; a first through via inside the first gate cut and insulated from the first gate electrode; a first upper source/drain contact on and electrically connected to the first upper source/drain region; and a second upper source/drain contact on the first upper source/drain region and electrically connecting the second upper source/drain region with the first through via.
