International business machines corporation (20240112986). COMPOSITE CONTACT BETWEEN BACKSIDE POWER ELEMENT AND SOURCE/DRAIN REGION simplified abstract
Contents
- 1 COMPOSITE CONTACT BETWEEN BACKSIDE POWER ELEMENT AND SOURCE/DRAIN REGION
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 COMPOSITE CONTACT BETWEEN BACKSIDE POWER ELEMENT AND SOURCE/DRAIN REGION - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
COMPOSITE CONTACT BETWEEN BACKSIDE POWER ELEMENT AND SOURCE/DRAIN REGION
Organization Name
international business machines corporation
Inventor(s)
Koichi Motoyama of Clifton Park NY (US)
Alexander Reznicek of Troy NY (US)
Tsung-Sheng Kang of Ballston Lake NY (US)
Oscar Van Der Straten of Guilderland Center NY (US)
COMPOSITE CONTACT BETWEEN BACKSIDE POWER ELEMENT AND SOURCE/DRAIN REGION - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240112986 titled 'COMPOSITE CONTACT BETWEEN BACKSIDE POWER ELEMENT AND SOURCE/DRAIN REGION
Simplified Explanation
The semiconductor device described in the abstract includes a transistor with a source/drain region and a contact on the source/drain region. Additionally, there is a via extending from the contact along a side of the source/drain region to a power element. Both the contact and the via are made up of multiple conductive materials.
- The semiconductor device features a transistor with a source/drain region and a contact.
- A via extends from the contact to a power element, made of multiple conductive materials.
Potential Applications
The technology described in this patent application could be applied in the following areas:
- Semiconductor manufacturing
- Electronics industry
- Power management systems
Problems Solved
This technology helps address the following issues:
- Enhancing the performance of transistors
- Improving power distribution within semiconductor devices
Benefits
The semiconductor device outlined in the patent application offers the following benefits:
- Increased efficiency in power management
- Enhanced conductivity in the transistor structure
Potential Commercial Applications
The technology could find applications in various commercial sectors, including:
- Consumer electronics
- Automotive industry
- Renewable energy sector
Possible Prior Art
One possible prior art related to this technology could be the use of multiple conductive materials in semiconductor devices for improved performance.
Unanswered Questions
How does the use of multiple conductive materials impact the overall efficiency of the semiconductor device?
The efficiency of the semiconductor device could be influenced by factors such as conductivity, heat dissipation, and overall performance. Further research and testing may be needed to fully understand the impact of using multiple conductive materials in this context.
What are the potential challenges in implementing this technology on a larger scale in semiconductor manufacturing processes?
Scaling up the production of semiconductor devices with this technology may present challenges related to cost, compatibility with existing manufacturing processes, and ensuring consistent performance across a large number of devices. Research and development efforts would be required to address these challenges effectively.
Original Abstract Submitted
a semiconductor device includes a transistor having a source/drain region and a contact disposed on the source/drain region. the semiconductor device further includes a via extending from the contact along a side of the source/drain region to a power element. the contact and the via each comprise a plurality of conductive materials.
