18162892. SEMICONDUCTOR DEVICE INCLUDING ISOLATION REGIONS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

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SEMICONDUCTOR DEVICE INCLUDING ISOLATION REGIONS

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Min-Chul Sun of Yongin-si (KR)

Dae Won Ha of Seoul (KR)

Dong Hoon Hwang of Hwaseong-si (KR)

Jong Hwa Baek of Yongin-si (KR)

Jong Min Jeon of Suwon-si (KR)

Seung Mo Ha of Seoul (KR)

Kwang Yong Yang of Seoul (KR)

Jae Young Park of Yongin-si (KR)

Young Su Chung of Suwon-si (KR)

SEMICONDUCTOR DEVICE INCLUDING ISOLATION REGIONS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18162892 titled 'SEMICONDUCTOR DEVICE INCLUDING ISOLATION REGIONS

Simplified Explanation

Abstract Explanation

The patent application describes a semiconductor device that includes a device isolation region. This region separates active regions on a substrate and is made up of two portions with different insulating materials. The first portion is closer to the active regions and the second portion has a different height at its bottom surface.

Bullet Points

  • Semiconductor device with a device isolation region
  • First active regions on a substrate
  • Isolation region between active regions
  • Isolation region has two portions with different insulating materials
  • First portion is closer to active regions
  • Second portion has a different height at its bottom surface

Potential Applications

  • Integrated circuits
  • Microprocessors
  • Memory devices
  • Power devices
  • Communication devices

Problems Solved

  • Improved isolation between active regions
  • Enhanced performance and reliability of semiconductor devices
  • Reduction of leakage currents and interference between components

Benefits

  • Better control over device isolation
  • Increased efficiency and functionality of semiconductor devices
  • Improved performance and reliability
  • Reduction of manufacturing defects and failures


Original Abstract Submitted

A semiconductor device including a device isolation region is provided. The semiconductor device includes first active regions disposed on a substrate, and an isolation region between the active regions. The isolation region includes a first portion formed of a first insulating material, and a second portion formed of a second insulating material, having different characteristics from those of the first insulating material. The first portion is closer to the first active regions than the second portion. The second portion has a bottom surface having a height different from that of a bottom surface of the first portion.