Intel corporation (20240113107). GATE CUT, WITH ASYMMETRICAL CHANNEL TO GATE CUT SPACING simplified abstract

GATE CUT, WITH ASYMMETRICAL CHANNEL TO GATE CUT SPACING

Organization Name

intel corporation

Inventor(s)

Sukru Yemenicioglu of Portland OR (US)

Leonard P. Guler of Hillsboro OR (US)

Tahir Ghani of Portland OR (US)

Marni Nabors of Portland OR (US)

Xinning Wang of Hillsboro OR (US)

GATE CUT, WITH ASYMMETRICAL CHANNEL TO GATE CUT SPACING - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240113107 titled 'GATE CUT, WITH ASYMMETRICAL CHANNEL TO GATE CUT SPACING

Simplified Explanation

An integrated circuit patent application describes a structure where two devices are laterally adjacent to each other, with a gate cut separating them. The first device includes a first body with a gate structure, while the second device includes a second body with a gate structure. The gate cut made of dielectric material separates the two gate structures, with different lateral distances from the cut.

• The patent application describes an integrated circuit with two devices, each with its own body and gate structure.
• A gate cut made of dielectric material separates the two devices laterally.
• The first and second bodies are laterally separated from the gate cut by different distances.
• The first and second devices can be fin-based devices or gate-all-around devices.

Potential Applications

The technology described in the patent application could be applied in:

• Advanced semiconductor manufacturing processes
• High-performance computing systems
• Mobile devices and smartphones

Problems Solved

This technology helps address issues related to:

• Improving the performance and efficiency of integrated circuits
• Enhancing the scalability of semiconductor devices
• Reducing power consumption in electronic devices

Benefits

The benefits of this technology include:

• Higher integration density on a chip
• Improved transistor performance
• Enhanced reliability and stability of integrated circuits

Potential Commercial Applications

The technology could have commercial applications in:

• Semiconductor industry for manufacturing advanced chips
• Electronics manufacturers for developing cutting-edge devices
• Research institutions for exploring new possibilities in semiconductor technology

Possible Prior Art

One possible prior art for this technology could be the development of finFET transistors, which also involve fin-based devices with gate structures.

Unanswered Questions

How does the lateral separation of the first and second bodies from the gate cut impact the overall performance of the integrated circuit?

The lateral separation could affect the capacitance and leakage current of the devices, influencing their speed and power consumption.

What are the specific manufacturing challenges associated with creating the gate cut between the first and second devices?

Manufacturing challenges may include precise alignment of the gate cut, controlling the dielectric material deposition, and ensuring uniformity across the integrated circuit.

Original Abstract Submitted

an integrated circuit includes a first device and a laterally adjacent second device. the first device includes a first body including semiconductor material extending from a first source region to a first drain region, and a first gate structure on the first body. the second device includes a second body including semiconductor material extending from a second source region to a second drain region, and a second gate structure on the second body. a gate cut including dielectric material is between and laterally separates the first gate structure and the second gate structure. the first body is separated laterally from the gate cut by a first distance, and the second body is separated laterally from the gate cut by a second distance. in an example, the first and second distances differ by at least 2 nanometers. in an example, the first and second devices are fin-based devices or gate-all-around devices.