18150266. COMPOSITE GATE DIELECTRIC FOR HIGH-VOLTAGE DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

COMPOSITE GATE DIELECTRIC FOR HIGH-VOLTAGE DEVICE

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Jhu-Min Song of Nantou City (TW)

Ying-Chou Chen of Taichung City (TW)

Yi-Kai Ciou of Taoyuan City (TW)

Chien-Chih Chou of New Taipei City (TW)

Fei-Yun Chen of Hsinchu (TW)

Yu-Chang Jong of Hsinchu City (TW)

Chi-Te Lin of Hsinchu City (TW)

COMPOSITE GATE DIELECTRIC FOR HIGH-VOLTAGE DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18150266 titled 'COMPOSITE GATE DIELECTRIC FOR HIGH-VOLTAGE DEVICE

Simplified Explanation

The present disclosure describes an integrated chip with source/drain regions, gate dielectrics, and gate electrodes arranged within a substrate recess.

• The integrated chip includes a substrate with a recess on its upper surface.
• Source/drain regions are located on opposing sides of the recess within the substrate.
• A first gate dielectric is arranged along the interior surfaces of the recess.
• A second gate dielectric is placed on the first gate dielectric within the recess.
• A gate electrode is positioned on the second gate dielectric, which includes protrusions along its sides.

Potential Applications

This technology could be applied in:

• Semiconductor manufacturing
• Integrated circuit design
• Electronic devices

Problems Solved

This innovation addresses:

• Enhanced performance of integrated chips
• Improved gate dielectric structures
• Increased efficiency in semiconductor devices

Benefits

The benefits of this technology include:

• Higher integration density
• Improved electrical performance
• Enhanced reliability of integrated circuits

Potential Commercial Applications

This technology could be utilized in:

• Mobile devices
• Computers
• Automotive electronics

Possible Prior Art

One possible prior art could be the use of gate dielectrics with protrusions in semiconductor devices to improve performance.

How does this technology compare to existing integrated chip designs in terms of performance and efficiency?

This article does not provide a direct comparison with existing integrated chip designs to evaluate performance and efficiency.

What specific electronic devices or applications could benefit the most from this technology?

The article does not specify which electronic devices or applications could benefit the most from the described technology.

Original Abstract Submitted

The present disclosure relates to an integrated chip. The integrated chip includes a substrate having one or more interior surfaces forming a recess within an upper surface of the substrate. Source/drain regions are disposed within the substrate on opposing sides of the recess. A first gate dielectric is arranged along the one or more interior surfaces forming the recess, and a second gate dielectric is arranged on the first gate dielectric and within the recess. A gate electrode is disposed on the second gate dielectric. The second gate dielectric includes one or more protrusions that extend outward from a recessed upper surface of the second gate dielectric and that are arranged along opposing sides of the second gate dielectric.