17459065. DIELECTRIC PROTECTION LAYER IN MIDDLE-OF-LINE INTERCONNECT STRUCTURE MANUFACTURING METHOD simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
Contents
DIELECTRIC PROTECTION LAYER IN MIDDLE-OF-LINE INTERCONNECT STRUCTURE MANUFACTURING METHOD
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Kuan-Da Huang of Hsinchu County (TW)
Hao-Heng Liu of Hsinchu City (TW)
DIELECTRIC PROTECTION LAYER IN MIDDLE-OF-LINE INTERCONNECT STRUCTURE MANUFACTURING METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 17459065 titled 'DIELECTRIC PROTECTION LAYER IN MIDDLE-OF-LINE INTERCONNECT STRUCTURE MANUFACTURING METHOD
Simplified Explanation
The patent application describes a method for manufacturing an integrated chip, specifically focusing on the formation of a transistor structure and the creation of a protective layer and contact opening.
- The method begins by forming a transistor structure over a substrate, which includes source/drain regions and a gate electrode.
- A lower inter-level dielectric (ILD) layer is then formed over the source/drain regions and around the gate electrode.
- A gate capping layer is added over the gate electrode to provide additional protection.
- A selective etch and deposition process is performed to simultaneously create a dielectric protection layer on the gate capping layer and a contact opening within the lower ILD layer.
- Finally, a lower source/drain contact is formed within the contact opening.
Potential applications of this technology:
- Integrated circuit manufacturing
- Semiconductor industry
- Electronics manufacturing
Problems solved by this technology:
- Provides a method for forming a protective layer on a gate electrode while simultaneously creating a contact opening, simplifying the manufacturing process.
- Ensures the integrity and reliability of the transistor structure by protecting it with a dielectric layer.
Benefits of this technology:
- Simplifies the manufacturing process by combining multiple steps into a single process.
- Enhances the reliability and performance of the integrated chip by providing a protective layer for the transistor structure.
- Improves the efficiency of the manufacturing process by reducing the number of required steps.
Original Abstract Submitted
In some embodiments, the present disclosure relates to a method for manufacturing an integrated chip. The method includes forming a transistor structure over a substrate. The transistor structure comprises a pair of source/drain regions and a gate electrode between the source/drain regions. A lower inter-level dielectric (ILD) layer is formed over the pair of source/drain regions and around the gate electrode. A gate capping layer is formed over the gate electrode. A selective etch and deposition process is performed to form a dielectric protection layer on the gate capping layer while forming a contact opening within the lower ILD layer. A lower source/drain contact is formed within the contact opening.
