17958285. WALL THAT INCLUDES A GAS BETWEEN METAL GATES OF A SEMICONDUCTOR DEVICE simplified abstract (Intel Corporation)
Contents
- 1 WALL THAT INCLUDES A GAS BETWEEN METAL GATES OF A SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 WALL THAT INCLUDES A GAS BETWEEN METAL GATES OF A SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
WALL THAT INCLUDES A GAS BETWEEN METAL GATES OF A SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Sukru Yemenicioglu of Portland OR (US)
Leonard P. Guler of Hillsboro OR (US)
Hongqian Sun of Sammamish WA (US)
Shengsi Liu of Portland OR (US)
Tahir Ghani of Portland OR (US)
WALL THAT INCLUDES A GAS BETWEEN METAL GATES OF A SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17958285 titled 'WALL THAT INCLUDES A GAS BETWEEN METAL GATES OF A SEMICONDUCTOR DEVICE
Simplified Explanation
Embodiments described herein may be related to apparatuses, processes, systems, and/or techniques for forming a wall within a metal gate cut in a transistor layer of a semiconductor device, where the wall includes a volume of a gas such as air, nitrogen, or another inert gas. Other embodiments may be described and/or claimed.
- Explanation:
- The innovation involves creating a wall within a metal gate cut in a transistor layer of a semiconductor device. - The wall contains a volume of gas, such as air, nitrogen, or another inert gas.
Potential Applications
The technology could be applied in: - Semiconductor manufacturing for improved transistor performance. - Microelectronics for enhancing device functionality.
Problems Solved
This technology addresses: - Enhancing the performance of transistors in semiconductor devices. - Improving the functionality and efficiency of microelectronic devices.
Benefits
The benefits of this technology include: - Increased transistor performance. - Enhanced functionality of microelectronic devices. - Improved efficiency in semiconductor manufacturing processes.
Potential Commercial Applications
Optimizing Transistor Performance with Gas Wall Formation
Possible Prior Art
No prior art is known at this time.
Unanswered Questions
How does the gas wall formation impact the overall performance of the semiconductor device?
The gas wall formation could potentially affect the speed, power consumption, and reliability of the semiconductor device.
What are the specific gases that can be used to create the wall within the metal gate cut?
The specific gases used, such as air, nitrogen, or other inert gases, may have varying effects on the performance of the semiconductor device.
Original Abstract Submitted
Embodiments described herein may be related to apparatuses, processes, systems, and/or techniques for forming a wall within a metal gate cut in a transistor layer of a semiconductor device, where the wall includes a volume of a gas such as air, nitrogen, or another inert gas. Other embodiments may be described and/or claimed.
