18301524. GUARD RING STRUCTURE AND METHOD FORMING SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

GUARD RING STRUCTURE AND METHOD FORMING SAME

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

I-Shan Huang of Tainan City (TW)

GUARD RING STRUCTURE AND METHOD FORMING SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18301524 titled 'GUARD RING STRUCTURE AND METHOD FORMING SAME

Simplified Explanation

The semiconductor structure described in the patent application includes a semiconductor substrate with two different circuit regions, each containing transistors with different gate stack compositions, and a guard ring structure separating the two regions.

• The semiconductor structure has a semiconductor substrate with distinct first and second circuit regions.
• First transistors in the first circuit region have gate stacks with a different material composition compared to second transistors in the second circuit region.
• A guard ring structure is positioned between the first and second circuit regions, fully surrounding the second circuit region.

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1. 1. 1. Potential Applications

• This technology can be applied in the manufacturing of integrated circuits for various electronic devices.
• It can be used in the development of high-performance and efficient semiconductor devices.

1. 1. 1. Problems Solved

• Helps in reducing interference between different circuit regions on the semiconductor substrate.
• Enhances the overall performance and reliability of the semiconductor structure.

1. 1. 1. Benefits

• Improved isolation between circuit regions leads to better functionality and performance.
• Enables the creation of more complex and efficient semiconductor devices.
• Enhances the overall reliability and longevity of the semiconductor structure.

Original Abstract Submitted

The present disclosure provides a semiconductor structure in accordance with some embodiment. The semiconductor structure includes a semiconductor substrate having a first circuit region and a second circuit region, first transistors that include first gate stacks disposed in the first circuit region, second transistors that include second gate stacks disposed in the second circuit region, and a guard ring structure disposed between the first circuit region and the second circuit region. The first gate stacks and the second gate stacks have different material compositions. The guard ring structure fully surrounds the second circuit region.