20240047339. INTEGRATED CIRCUIT DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

INTEGRATED CIRCUIT DEVICE

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

SEUNGMIN Cha of SUWON-SI (KR)

SEUNGMIN Song of SUWON-SI (KR)

YOUNGWOO Kim of SUWON-SI (KR)

JINKYU Kim of SUWON-SI (KR)

SORA You of SUWON-SI (KR)

NAMHYUN Lee of SUWON-SI (KR)

SUNGMOON Lee of SUWON-SI (KR)

INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240047339 titled 'INTEGRATED CIRCUIT DEVICE

Simplified Explanation

The abstract describes an integrated circuit device that includes a substrate with a fin-type active region defined by a trench on the front surface. The trench is filled with a device separation layer, and a source/drain region is located on the fin-type active region. A first conductive plug is arranged on the source/drain region and connected to it. A power wiring line is partially arranged on the lower surface of the substrate, and a buried rail is connected to the power wiring line through the device separation layer. The buried rail decreases in horizontal width towards the power wiring line, and a power via connects the buried rail to the first conductive plug.

• The device includes a fin-type active region defined by a trench, allowing for compact and efficient circuit design.
• The source/drain region and first conductive plug provide electrical connectivity within the device.
• The power wiring line and buried rail enable power distribution within the integrated circuit.
• The decreasing width of the buried rail towards the power wiring line helps optimize power distribution.
• The power via connects the buried rail to the first conductive plug, facilitating power transfer.

Potential Applications

• This technology can be applied in various integrated circuit devices, such as microprocessors, memory chips, and communication devices.
• It can enhance the performance and efficiency of these devices by improving power distribution and connectivity.

Problems Solved

• The integration of the fin-type active region and the trench helps overcome space limitations and allows for more compact circuit designs.
• The buried rail and power via enable efficient power distribution within the integrated circuit, addressing power-related challenges.

Benefits

• Improved circuit design efficiency and compactness.
• Enhanced power distribution and connectivity.
• Potential for improved performance and efficiency in integrated circuit devices.

Original Abstract Submitted

an integrated circuit device includes a substrate, having a front surface and a rear surface opposite to each other, and a fin-type active region defined by a trench in the front surface, a device separation layer filling the trench, a source/drain region on the fin-type active region, a first conductive plug arranged on the source/drain region and electrically connected to the source/drain region, a power wiring line at least partially arranged on a lower surface of the substrate, a buried rail connected to the power wiring line through the device separation layer and decreasing in horizontal width toward the power wiring line, and a power via connecting the buried rail to the first conductive plug.