18190444. INTEGRATED CIRCUIT STRUCTURE AND METHOD FOR FABRICATING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

INTEGRATED CIRCUIT STRUCTURE AND METHOD FOR FABRICATING THE SAME

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Wen-Li Chiu of Kaohsiung City (TW)

Yi-Juei Lee of Hsinchu City (TW)

Yu-Jie Ye of Hsinchu City (TW)

Chi-Hsin Chang of Hsinchu City (TW)

Chun-Jun Lin of Hsinchu City (TW)

INTEGRATED CIRCUIT STRUCTURE AND METHOD FOR FABRICATING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18190444 titled 'INTEGRATED CIRCUIT STRUCTURE AND METHOD FOR FABRICATING THE SAME

Simplified Explanation

The integrated circuit structure described in the patent application includes a semiconductor substrate with a semiconductor fin, a first gate line, a second gate line, and a first auxiliary gate portion connecting the first and second gate lines.

• The semiconductor fin extends along a first direction, while the first and second gate lines extend along a second direction different from the first direction when viewed from the top.
• The first auxiliary gate portion connects the first gate line to the second gate line from the top view.

Potential Applications

This technology could be applied in the development of advanced integrated circuits for various electronic devices such as smartphones, computers, and other digital systems.

Problems Solved

This innovation helps in improving the performance and efficiency of integrated circuits by providing a more compact and interconnected structure, enhancing overall functionality.

Benefits

The integrated circuit structure offers increased functionality, improved performance, and enhanced efficiency, leading to better overall user experience and reliability in electronic devices.

Potential Commercial Applications

The technology can be utilized in the semiconductor industry for manufacturing high-performance integrated circuits, catering to the growing demand for advanced electronic devices in the market.

Possible Prior Art

One possible prior art for this technology could be the development of similar integrated circuit structures with interconnected gate lines and semiconductor fins in the semiconductor industry.

How does this technology compare to existing integrated circuit structures in terms of performance and efficiency?

This article does not provide a direct comparison between this technology and existing integrated circuit structures in terms of performance and efficiency. Further research and analysis would be needed to determine the specific advantages and limitations of this innovation compared to current solutions.

What are the potential challenges or limitations of implementing this integrated circuit structure in practical applications?

The article does not address the potential challenges or limitations of implementing this integrated circuit structure in practical applications. Factors such as manufacturing costs, scalability, and compatibility with existing technologies could be important considerations that need to be explored further.

Original Abstract Submitted

An integrated circuit (IC) structure includes a semiconductor substrate, a first gate line, a second gate line, and a first auxiliary gate portion. The semiconductor substrate comprises a semiconductor fin. The semiconductor fin extends substantially along a first direction. The first gate line and the second gate line extend substantially along a second direction different form the first direction from a top view. The first auxiliary gate portion connects the first gate line to the second gate line from the top view.