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Category:H01L21/8238
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Pages in category "H01L21/8238"
The following 200 pages are in this category, out of 314 total.
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- 17381006. INTEGRATED CIRCUIT WITH NANOSHEET TRANSISTORS WITH METAL GATE PASSIVATION simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17450121. VERTICAL FET WITH CONTACT TO GATE ABOVE ACTIVE FIN simplified abstract (International Business Machines Corporation)
- 17455935. PARASITIC CAPACITANCE REDUCTION FOR TALL NANOSHEET DEVICES simplified abstract (International Business Machines Corporation)
- 17455941. STACKED NANOSHEET DEVICES WITH MATCHED THRESHOLD VOLTAGES FOR NFET/PFET simplified abstract (International Business Machines Corporation)
- 17457271. INTEGRATION OF HORIZONTAL NANOSHEET DEVICE AND VERTICAL NANO FINS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17457448. NANOSHEET EPITAXY WITH FULL BOTTOM ISOLATION simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17494101. STACKED COMPLEMENTARY FIELD EFFECT TRANSISTORS simplified abstract (International Business Machines Corporation)
- 17522015. BOTTOM CONTACT FOR STACKED GAA FET simplified abstract (International Business Machines Corporation)
- 17524062. VERTICAL TRANSISTORS HAVING IMPROVED CONTROL OF PARASITIC CAPACITANCE AND GATE-TO-CONTACT SHORT CIRCUITS simplified abstract (International Business Machines Corporation)
- 17541529. Fork Sheet with Reduced Coupling Effect simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17543215. COMPLEMENTARY FIELD EFFECT TRANSISTORS HAVING MULTIPLE VOLTAGE THRESHOLDS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17545610. STACKED FETS WITH NON-SHARED WORK FUNCTION METALS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17547775. MIDDLE OF LINE STRUCTURE WITH STACKED DEVICES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17548913. NANOSHEET DEVICE WITH VERTICAL BLOCKER FIN simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17551309. STACKED COMPLEMENTARY TRANSISTOR STRUCTURE FOR THREE-DIMENSIONAL INTEGRATION simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17551829. ANGLED VIA FOR TIP TO TIP MARGIN IMPROVEMENT simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17574043. INTEGRATED CIRCUIT DEVICES INCLUDING STACKED TRANSISTORS AND METHODS OF FORMING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17643014. UNIPOLAR-FET IMPLEMENTATION IN STACKED-FET CMOS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17643362. STACKED FIELD EFFECT TRANSISTORS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17655321. Integration of Multiple Transistors Having Fin and Mesa Structures simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17677329. METHODS OF FORMING INTEGRATED CIRCUIT DEVICES INCLUDING STACKED TRANSISTORS AND INTEGRATED CIRCUIT DEVICES FORMED BY THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17677929. DEVICE WITH ALTERNATE COMPLEMENTARY CHANNELS AND FABRICATION METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17683589. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17685593. INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 17691438. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17703329. Transistor Gate Structures and Methods of Forming the Same simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17707015. INTEGRATED CIRCUIT SEMICONDUCTOR ELEMENT HAVING HETEROGENEOUS GATE STRUCTURES AND METHOD OF FABRICATING INTEGRATED CIRCUIT SEMICONDUCTOR ELEMENT simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17730797. Semiconductor Devices and Methods of Forming the Same simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17804397. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17808186. SEMICONDUCTOR DEVICE WITH POWER VIA simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17808360. SINGLE STACK DUAL CHANNEL GATE-ALL-AROUND NANOSHEET WITH STRAINED PFET AND BOTTOM DIELECTRIC ISOLATION NFET simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17815187. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17818048. MONOLITHIC THREE-DIMENSIONAL (3D) COMPLEMENTARY FIELD EFFECT TRANSISTOR (CFET) CIRCUITS AND METHOD OF MANUFACTURE simplified abstract (QUALCOMM Incorporated)
- 17822173. STACKED FET SUBSTRATE CONTACT simplified abstract (International Business Machines Corporation)
- 17832900. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 17838384. THREE-DIMENSIONAL SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17838646. SOURCE AND DRAIN CONTACTS FORMED USING SACRIFICIAL REGIONS OF SOURCE AND DRAIN simplified abstract (Intel Corporation)
- 17846423. ENHANCED POWER AND SIGNAL FOR STACKED-FETS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17846606. INTEGRATED CIRCUIT INCLUDING STANDARD CELL AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17858844. FLIP-FLOP WITH TRANSISTORS HAVING DIFFERENT THRESHOLD VOLTAGES, SEMICONDUCTOR DEVICE INCLUDING SAME AND METHODS OF MANUFACTURING SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17866966. MULTI-CHANNEL FIELD EFFECT TRANSISTORS WITH ENHANCED MULTI-LAYERED SOURCE/DRAIN REGIONS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17868401. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 17876389. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17876737. DEVICE WITH TAPERED INSULATION STRUCTURE AND RELATED METHODS simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17877970. SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17886921. SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17895323. HYBRID FIN-DIELECTRIC SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17896353. SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17897151. SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17898184. APPARATUS INCLUDING ADJUSTED WELLS AND METHODS OF MANUFACTURING THE SAME simplified abstract (Micron Technology, Inc.)
- 17899111. BACKSIDE CONTACTS FOR CELL HEIGHT SCALING simplified abstract (International Business Machines Corporation)
- 17931319. DIFFERENT DIMENSIONS ACROSS ACTIVE REGION FOR STRONGER VIA TO BACKSIDE POWER RAIL simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17931982. FIELD EFFECT TRANSISTOR WITH CHANNEL CAPPING LAYER simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17932557. HETEROGENEOUS GATE ALL AROUND DIELECTRIC THICKNESS simplified abstract (International Business Machines Corporation)
- 17932677. DUAL DIELECTRIC STRESSORS simplified abstract (International Business Machines Corporation)
- 17933882. COMPOSITE NANOSHEET TUNNEL TRANSISTORS simplified abstract (International Business Machines Corporation)
- 17936416. VERTICAL INVERTER FORMATION ON STACKED FIELD EFFECT TRANSISTOR (SFET) simplified abstract (International Business Machines Corporation)
- 17936417. MONOLITHIC STACKED FIELD EFFECT TRANSISTOR (SFET) WITH DUAL MIDDLE DIELECTRIC ISOLATION (MDI) SEPARATION simplified abstract (International Business Machines Corporation)
- 17937473. SEMICONDUCTOR DEVICE WITH CMOS INVERTER simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17937955. FIELD EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN simplified abstract (International Business Machines Corporation)
- 17945422. MULTI-VT SOLUTION FOR REPLACEMENT METAL GATE BONDED STACKED FET simplified abstract (International Business Machines Corporation)
- 17945888. HIGH PERFORMANCE 3D COMPACT TRANSISTOR ARCHITECTURE simplified abstract (TOKYO ELECTRON LIMITED)
- 17946017. COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) APPARATUS WITH SELF-ALIGNED BACKSIDE CONTACT simplified abstract (International Business Machines Corporation)
- 17946821. SELF-ALIGNED BACKSIDE CONTACT simplified abstract (International Business Machines Corporation)
- 17958293. EPITAXIAL STRUCTURE AND GATE METAL STRUCTURES WITH A PLANAR TOP SURFACE simplified abstract (Intel Corporation)
- 17958805. SEMICONDUCTOR DEVICE HAVING WORK-FUNCTION METAL AND METHOD OF FORMING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17962222. HIGH PERFORMANCE 3D CHANNELS WITH UPSILON NANOSHEETS simplified abstract (Tokyo Electron Limited)
- 17969260. Local VDD And VSS Power Supply Through Dummy Gates with Gate Tie-Downs and Associated Benefits simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18047954. OPTIMIZATION OF VERTICAL TRANSPORT FIELD EFFECT TRANSISTOR INTEGRATION simplified abstract (QUALCOMM Incorporated)
- 18053012. INTEGRATED CIRCUIT AND METHOD OF MANUFACTURING SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18053157. SEMICONDUCTOR DEVICE MANUFACTURING METHOD simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18077281. INTEGRATED CIRCUIT DEVICE INCLUDING GATE CONTACT simplified abstract (Samsung Electronics Co., Ltd.)
- 18082617. METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18093932. CMOS TOP SOURCE/DRAIN REGION DOPING AND EPITAXIAL GROWTH FOR A VERTICAL FIELD EFFECT TRANSISTOR simplified abstract (International Business Machines Corporation)
- 18097249. SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18097263. SEMICONDUCTOR DEVICE STRUCTURE INCLUDING FORKSHEET TRANSISTORS AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18097323. CONTACT STRUCTURES WITH DEPOSITED SILICIDE LAYERS simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18110330. SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18125512. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18126298. METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES AND SEMICONDUCTOR DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18128061. Epitaxial Structures In Semiconductor Devices simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18149128. FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18149495. FINFET EPI CHANNELS HAVING DIFFERENT HEIGHTS ON A STEPPED SUBSTRATE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18150474. Transistor Gate Structures and Methods of Forming the Same simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18151279. Dielectric Walls for Complementary Field Effect Transistors simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18151990. METHOD OF MAKING A SEMICONDUCTOR DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18152007. INTEGRATED CIRCUIT HAVING TRANSISTORS WITH DIFFERENT WIDTH SOURCE AND DRAIN TERMINALS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18152775. SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18153553. BARRIER LAYER FOR WEAKENED BOUNDARY EFFECT simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18154275. SEMICONDUCTOR DEVICE WITH STRAINED CHANNELS AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18155914. CELL HAVING STACKED PICK-UP REGION simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18157395. STRUCTURE OF ISOLATION FEATURE OF SEMICONDUCTOR DEVICE STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18163573. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18165486. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18168504. COMPLEMENTARY FIELD EFFECT TRANSISTOR WITH CONDUCTIVE THROUGH SUBSTRATE LAYER simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18169628. SEMICONDUCTOR STRUCTURE WITH HIGH INTEGRATION DENSITY AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18173847. INTEGRATED CIRCUIT DEVICES INCLUDING STACKED TRANSISTORS AND METHODS OF FORMING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18176170. SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18177409. Semiconductor Structures With Reduced Parasitic Capacitance And Methods For Forming The Same simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18180720. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18181750. MULTI-GATE DEVICE FABRICATION METHODS AND RELATED STRUCTURES simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18188314. Crystallization of High-K Dielectric Layer simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18196191. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18198064. METHODS FOR PATTERNING SUBSTRATES TO ADJUST VOLTAGE PROPERTIES simplified abstract (Applied Materials, Inc.)
- 18214861. INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18239241. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18244741. SINGLE GATED 3D NANOWIRE INVERTER FOR HIGH DENSITY THICK GATE SOC APPLICATIONS simplified abstract (Intel Corporation)
- 18298277. Isolation Structures in Semiconductor Devices simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18306004. VERTICALLY STACKED TRANSISTORS AND FABRICATION THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18312811. METHOD OF FABRICATING SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18314536. INTEGRATED CIRCUIT AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18334099. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 18366864. SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18367292. GATE CUT AND FIN TRIM ISOLATION FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract (Intel Corporation)
- 18367549. INTEGRATED CIRCUIT INCLUDING STANDARD CELL WITH A METAL LAYER HAVING A PATTERN AND METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18388419. Gate Structures For Semiconductor Devices simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18447682. SIGNAL CONDUCTING LINE ARRANGEMENTS IN INTEGRATED CIRCUITS simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18447840. Integrated Circuit Layout, Integrated Circuit, and Method for Fabricating the Same simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18475441. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 18477290. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18478410. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18486331. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18491470. METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES BY ETCHING ACTIVE FINS USING ETCHING MASKS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18504027. METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18508788. MELT ANNEAL SOURCE AND DRAIN REGIONS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18510370. AIR GAP FORMATION BETWEEN GATE SPACER AND EPITAXY STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18513028. GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DEPOPULATED CHANNEL STRUCTURES USING SELECTIVE BOTTOM-UP APPROACH simplified abstract (Intel Corporation)
- 18513562. SEMICONDUCTOR DEVICE STRUCTURE INCLUDING FORKSHEET TRANSISTORS AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18515912. BOUNDARY DESIGN FOR HIGH-VOLTAGE INTEGRATION ON HKMG TECHNOLOGY simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18516215. Gate Structures For Semiconductor Devices simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18516408. Fin Loss Prevention simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18516410. FIELD EFFECT TRANSISTORS WITH DUAL SILICIDE CONTACT STRUCTURES simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18516595. SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITHOUT FIN END GAP simplified abstract (Intel Corporation)
- 18517275. FLEXIBLE MERGE SCHEME FOR SOURCE/DRAIN EPITAXY REGIONS simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18517276. CELL STRUCTURE HAVING DIFFERENT POLY EXTENSION LENGTHS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18517400. INTEGRATED CIRCUIT FIN STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18517458. Contacts for Semiconductor Devices and Methods of Forming the Same simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18518459. SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18518706. SHARED WELL STRUCTURE MANUFACTURING METHOD simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18519460. INTEGRATED CIRCUIT DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18519486. SEMICONDUCTOR DEVICE, METHOD OF AND SYSTEM FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18519862. CONTACT STRUCTURE OF A SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18520326. SILICIDE STRUCTURES IN TRANSISTORS AND METHODS OF FORMING simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18521140. Footing Removal in Cut-Metal Process simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18521253. SEMICONDUCTOR DEVICE HAVING A PLURALITY OF CHANNEL LAYERS AND METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18521404. METHOD OF MAKING POLYSILICON STRUCTURE INCLUDING PROTECTIVE LAYER simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18521584. FINFET STRUCTURE AND METHOD WITH REDUCED FIN BUCKLING simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18521975. SEMICONDUCTOR DEVICE AND FABRICATING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18522727. Integrated Standard Cell Structure simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18523637. NON-PLANAR INTEGRATED CIRCUIT STRUCTURES HAVING MITIGATED SOURCE OR DRAIN ETCH FROM REPLACEMENT GATE PROCESS simplified abstract (Intel Corporation)
- 18525988. HIGH PERFORMANCE MOSFETS HAVING VARYING CHANNEL STRUCTURES simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18526084. Low-K Gate Spacer and Methods for Forming the Same simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18526385. INTEGRATED CIRCUIT DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18526445. SEMICONDUCTOR DEVICES WITH BACKSIDE ROUTING AND METHOD OF FORMING SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18526828. CONTACT AIR GAP FORMATION AND STRUCTURES THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18526839. Multi-Gate Device And Related Methods simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18540524. COMPLEMENTARY TRANSISTOR AND SEMICONDUCTOR DEVICE simplified abstract (Sony Group Corporation)
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- Intel corporation (20240105452). GATE CUTS WITH SELF-FORMING POLYMER LAYER simplified abstract
- Intel corporation (20240105453). HIGH ASPECT RATIO METAL GATE CUTS simplified abstract
- Intel corporation (20240105520). TRENCH PLUG HARDMASK FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract
- Intel corporation (20240105774). INTEGRATED CIRCUIT STRUCTURES WITH UNIFORM EPITAXIAL SOURCE OR DRAIN CUT simplified abstract
- Intel corporation (20240105854). TRANSISTOR STRUCTURES WITH A METAL OXIDE CONTACT BUFFER AND A METHOD OF FABRICATING THE TRANSISTOR STRUCTURES simplified abstract
- Intel corporation (20240113116). EPITAXIAL STRUCTURE AND GATE METAL STRUCTURES WITH A PLANAR TOP SURFACE simplified abstract
- Intel Corporation patent applications on April 4th, 2024
- Intel Corporation patent applications on February 29th, 2024
- INTEL CORPORATION patent applications on February 8th, 2024
- Intel Corporation patent applications on March 14th, 2024
- Intel Corporation patent applications on March 28th, 2024
- International business machines corporation (20240096886). HETEROGENEOUS GATE ALL AROUND DIELECTRIC THICKNESS simplified abstract
- International business machines corporation (20240096887). MULTI-VT SOLUTION FOR REPLACEMENT METAL GATE BONDED STACKED FET simplified abstract
- International business machines corporation (20240096891). SELF-ALIGNED BACKSIDE CONTACT simplified abstract
- International business machines corporation (20240096946). DUAL DIELECTRIC STRESSORS simplified abstract
- International business machines corporation (20240096947). COMPOSITE NANOSHEET TUNNEL TRANSISTORS simplified abstract
- International business machines corporation (20240096978). COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) APPARATUS WITH SELF-ALIGNED BACKSIDE CONTACT simplified abstract
- International business machines corporation (20240105606). BACKSIDE POWER RAIL WITH TIGHT SPACE simplified abstract
- International business machines corporation (20240105614). TRANSISTORS WITH ENHANCED VIA-TO-BACKSIDE POWER RAIL simplified abstract
- International business machines corporation (20240112985). FIELD EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN simplified abstract
- International business machines corporation (20240113117). VERTICAL INVERTER FORMATION ON STACKED FIELD EFFECT TRANSISTOR (SFET) simplified abstract
- International business machines corporation (20240113162). MONOLITHIC STACKED FIELD EFFECT TRANSISTOR (SFET) WITH DUAL MIDDLE DIELECTRIC ISOLATION (MDI) SEPARATION simplified abstract
- International business machines corporation (20240128345). REDUCED GATE TOP CD WITH WRAP-AROUND GATE CONTACT simplified abstract
- International business machines corporation (20240136287). Local VDD And VSS Power Supply Through Dummy Gates with Gate Tie-Downs and Associated Benefits simplified abstract
- International Business Machines Corporation patent applications on April 18th, 2024
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on April 25th, 2024
- International Business Machines Corporation patent applications on April 4th, 2024
- International Business Machines Corporation patent applications on February 29th, 2024
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on January 25th, 2024
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on March 14th, 2024
- International Business Machines Corporation patent applications on March 21st, 2024
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on March 28th, 2024