Intel corporation (20240105452). GATE CUTS WITH SELF-FORMING POLYMER LAYER simplified abstract

GATE CUTS WITH SELF-FORMING POLYMER LAYER

Organization Name

intel corporation

Inventor(s)

Reza Bayati of Portland OR (US)

Matthew J. Prince of Portland OR (US)

Alison V. Davis of Portland OR (US)

Chun C. Kuo of Hillsboro OR (US)

Andrew Arnold of Hillsboro OR (US)

Ramy Ghostine of Portland OR (US)

Li Huey Tan of Hillsboro OR (US)

GATE CUTS WITH SELF-FORMING POLYMER LAYER - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240105452 titled 'GATE CUTS WITH SELF-FORMING POLYMER LAYER

Simplified Explanation

The patent application describes techniques for forming semiconductor devices with gate cuts that have a layer of polymer material at the edges. This polymer layer can protect exposed portions of the source or drain regions during subsequent processes. The gate structure may be interrupted between two transistors with a gate cut that includes a dielectric material to electrically isolate the portions of the gate structure on either side.

• The gate cuts in semiconductor devices have a layer of polymer material at the edges.
• The polymer layer protects exposed portions of the source or drain regions during subsequent processes.
• The gate structure may be interrupted between two transistors with a gate cut that includes a dielectric material for electrical isolation.

Potential Applications

The technology can be applied in the semiconductor industry for the manufacturing of advanced semiconductor devices with improved protection and isolation features.

Problems Solved

1. Protection of exposed portions of the source or drain regions during subsequent processes. 2. Electrical isolation between portions of the gate structure in semiconductor devices.

Benefits

1. Enhanced protection for semiconductor devices. 2. Improved electrical isolation capabilities. 3. Potential for increased device performance and reliability.

Potential Commercial Applications

Optimizing Gate Cut Polymer Layer for Enhanced Semiconductor Device Protection

Possible Prior Art

There may be prior art related to techniques for protecting exposed portions of semiconductor devices during manufacturing processes, but specific examples are not provided in the patent application.

Unanswered Questions

How does the polymer layer at the edges of the gate cuts impact the overall performance of the semiconductor device?

The patent application does not delve into the specific performance implications of the polymer layer at the edges of the gate cuts. Further research or testing may be needed to determine the exact effects on device performance.

Are there any limitations to the use of polymer material in semiconductor devices, such as temperature sensitivity or compatibility with other materials?

The patent application does not address any potential limitations or challenges associated with the use of polymer material in semiconductor devices. Additional studies or experiments may be necessary to explore any constraints in practical applications.

Original Abstract Submitted

techniques are provided to form semiconductor devices that include one or more gate cuts having a layer of polymer material at edges of the gate cut. the polymer layer may be provided as a byproduct of the etching process used to form the gate cut recess through the gate structure, and can protect any exposed portions of the source or drain regions from certain subsequent processes. the gate structure may be interrupted between two transistors with a gate cut that extends through an entire thickness of the gate structure and includes a dielectric material to electrically isolate the portions of the gate structure on either side of the gate cut. the edges of the gate cut may be lined with a polymer layer that is also on any exposed portions of the source or drain regions that were exposed during the etching process used to form the gate cut recess.