18077281. INTEGRATED CIRCUIT DEVICE INCLUDING GATE CONTACT simplified abstract (Samsung Electronics Co., Ltd.)
Contents
INTEGRATED CIRCUIT DEVICE INCLUDING GATE CONTACT
Organization Name
Inventor(s)
Yoonyoung Jung of Suwon-si (KR)
Sooyeon Hong of Yongin-si (KR)
INTEGRATED CIRCUIT DEVICE INCLUDING GATE CONTACT - A simplified explanation of the abstract
This abstract first appeared for US patent application 18077281 titled 'INTEGRATED CIRCUIT DEVICE INCLUDING GATE CONTACT
Simplified Explanation
The abstract describes an integrated circuit device that includes a substrate with a device area and a field area. It also includes active regions and gate structures in the device area and field area. The gate structures have gate contacts at a lower level than the upper end of the gate structure, and the minimum widths of the gate contacts are different from each other.
- The integrated circuit device includes a substrate with separate device and field areas.
- Active regions extend in one direction in the device area.
- There are two gate structures, one in the device area and one in the field area.
- The gate contacts are positioned on the gate structures at a lower level than the upper end of the gate structure.
- The first gate contact and the second gate contact have different minimum widths.
Potential applications of this technology:
- Integrated circuit manufacturing
- Semiconductor devices
- Electronics industry
Problems solved by this technology:
- Provides a more efficient and compact design for integrated circuits
- Allows for better control and manipulation of electrical signals
- Enhances the performance and functionality of semiconductor devices
Benefits of this technology:
- Improved integration and miniaturization of electronic components
- Enhanced performance and functionality of integrated circuits
- Increased efficiency and reliability of semiconductor devices
Original Abstract Submitted
An integrated circuit device includes: a substrate including a device area and a field area; active regions extending in a first direction in the device area; a first gate structure extending in a second direction intersecting the first direction in the device area and the field area; a second gate structure spaced apart from the first gate structure in the first direction; a first gate contact disposed on the first gate structure in the device area; and a second gate contact disposed on the second gate structure in the field area, wherein the first gate contact and the second gate contact are disposed at a level lower than an upper end of the first gate structure, and wherein a first minimum width of the first gate contact and a second minimum width of the second gate contact are different from each other.
