17838646. SOURCE AND DRAIN CONTACTS FORMED USING SACRIFICIAL REGIONS OF SOURCE AND DRAIN simplified abstract (Intel Corporation)

SOURCE AND DRAIN CONTACTS FORMED USING SACRIFICIAL REGIONS OF SOURCE AND DRAIN

Organization Name

Intel Corporation

Inventor(s)

Rohit Galatage of Hillsboro OR (US)

Willy Rachmady of Beaverton OR (US)

Subrina Rafique of Beaverton OR (US)

Nitesh Kumar of Beaverton OR (US)

Cheng-Ying Huang of Hillsboro OR (US)

Jami A. Wiedemer of Scappoose OR (US)

Nicloe K. Thomas of Portland OR (US)

Munzarin F. Qayyum of Hillsboro OR (US)

Patrick Morrow of Portland OR (US)

Marko Radosavljevic of Portland OR (US)

Mauro J. Kobrinsky of Portland OR (US)

SOURCE AND DRAIN CONTACTS FORMED USING SACRIFICIAL REGIONS OF SOURCE AND DRAIN - A simplified explanation of the abstract

This abstract first appeared for US patent application 17838646 titled 'SOURCE AND DRAIN CONTACTS FORMED USING SACRIFICIAL REGIONS OF SOURCE AND DRAIN

Simplified Explanation

The patent application describes an integrated circuit structure that includes a device with a source region, a drain region, a body, and a source contact. The source region consists of a first region and a second region that is compositionally different and located above the first region. The source contact extends through the second region and within the first region. In a p-channel metal-oxide-semiconductor (PMOS) device, the concentration of germanium in the second region is higher than in the first region. In an n-channel metal-oxide-semiconductor (NMOS) device, the doping concentration level of an n-type dopant in the second region is higher than in the first region.

• The integrated circuit structure includes a device with a source region, drain region, body, and source contact.
• The source region consists of a first region and a second region that is compositionally different and located above the first region.
• The source contact extends through the second region and within the first region.
• In a PMOS device, the concentration of germanium in the second region is higher than in the first region.
• In an NMOS device, the doping concentration level of an n-type dopant in the second region is higher than in the first region.

Potential Applications

• This technology can be applied in the design and manufacturing of integrated circuits.
• It can be used in various electronic devices such as smartphones, computers, and IoT devices.
• The integrated circuit structure can improve the performance and efficiency of PMOS and NMOS devices.

Problems Solved

• The integrated circuit structure addresses the need for improved performance and efficiency in PMOS and NMOS devices.
• It provides a solution for optimizing the concentration of germanium or doping concentration level in different regions of the source region.
• This technology helps in achieving better control and functionality of integrated circuits.

Benefits

• The integrated circuit structure offers enhanced performance and efficiency in PMOS and NMOS devices.
• It allows for improved control and functionality of integrated circuits.
• The technology enables the design of more advanced and powerful electronic devices.

Original Abstract Submitted

An integrated circuit structure includes a device including a source region, a drain region, a body laterally between the source and drain regions, and a source contact coupled to the source region. In an example, the source region includes a first region, and a second region compositionally different from and above the first region. The source contact extends through the second region and extends within the first region. In an example where the device is a p-channel metal-oxide-semiconductor (PMOS) device, a concentration of germanium within the second region is different (e.g., higher) than a concentration of germanium within the first region. In another example where the device is a n-channel metal-oxide-semiconductor (NMOS) device, a doping concentration level of a dopant (e.g., an n-type dopant) within the second region is different (e.g., higher) from a doping concentration level of the dopant within the first region.