17551309. STACKED COMPLEMENTARY TRANSISTOR STRUCTURE FOR THREE-DIMENSIONAL INTEGRATION simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
STACKED COMPLEMENTARY TRANSISTOR STRUCTURE FOR THREE-DIMENSIONAL INTEGRATION
Organization Name
INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor(s)
Kangguo Cheng of Schenectady NY (US)
Shogo Mochizuki of Mechanicville NY (US)
STACKED COMPLEMENTARY TRANSISTOR STRUCTURE FOR THREE-DIMENSIONAL INTEGRATION - A simplified explanation of the abstract
This abstract first appeared for US patent application 17551309 titled 'STACKED COMPLEMENTARY TRANSISTOR STRUCTURE FOR THREE-DIMENSIONAL INTEGRATION
Simplified Explanation
The abstract describes a device that includes a stacked complementary transistor structure, two interconnect structures, and two contacts. The stacked complementary transistor structure consists of two transistors of opposite types, with one transistor connected to each interconnect structure through a contact. The contacts are aligned with each other.
- The device includes a stacked complementary transistor structure.
- The stacked complementary transistor structure consists of two transistors of opposite types.
- The first transistor is connected to the first interconnect structure through a contact.
- The second transistor is connected to the second interconnect structure through a contact.
- The contacts are aligned with each other.
Potential Applications
- Integrated circuits
- Semiconductor devices
- Electronics manufacturing
Problems Solved
- Efficient connection of complementary transistors to interconnect structures
- Alignment of contacts for improved performance
Benefits
- Improved performance of complementary transistors
- Simplified manufacturing process
- Enhanced reliability and functionality of electronic devices
Original Abstract Submitted
A device comprises a first interconnect structure, a second interconnect structure, a stacked complementary transistor structure, a first contact, and a second contact. The stacked complementary transistor structure is disposed between the first and second interconnect structures. The stacked complementary transistor structure comprises a first transistor of a first type, and a second transistor of a second type which is opposite the first type. The first contact connects a first source/drain element of the first transistor to the first interconnect structure. The second contact connects a first source/drain element of the second transistor to the second interconnect structure. The first and second contacts are disposed in alignment with each other.
