18165486. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Myung Soo Seo of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18165486 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The patent application describes a semiconductor device that includes a substrate with two regions, each having an active pattern and an etch stop layer. Stacked nanosheets made of silicon germanium (SiGe) are placed on the etch stop layers. Gate electrodes are also present on the etch stop layers, extending in a horizontal direction.
- The semiconductor device includes a substrate with two regions, each having an active pattern and an etch stop layer.
- Stacked nanosheets made of silicon germanium (SiGe) are placed on the etch stop layers.
- Gate electrodes are present on the etch stop layers, extending in a horizontal direction.
Potential Applications
This technology can be applied in various fields, including:
- Electronics industry
- Semiconductor manufacturing
- Integrated circuit design
Problems Solved
The semiconductor device addresses the following problems:
- Improved performance and efficiency of semiconductor devices
- Enhanced functionality and miniaturization of electronic components
- Better control and manipulation of electrical signals
Benefits
The use of this technology offers several benefits:
- Increased speed and performance of semiconductor devices
- Reduced power consumption and improved energy efficiency
- Enhanced functionality and integration of electronic components
Original Abstract Submitted
A semiconductor device includes a substrate that includes a first region and a second region, a first active pattern on the first region and that extends in a first horizontal direction, a second active pattern on the second region and that extends in the first horizontal direction, a first etch stop layer on the first active pattern, a second etch stop layer on the second active pattern, a plurality of first nanosheets on the first etch stop layer and that are stacked in a vertical direction and include silicon germanium (SiGe), a plurality of second nanosheets on the second etch stop layer and that are stacked in the vertical direction, a first gate electrode on the first etch stop layer and that extends in a second horizontal direction, and a second gate electrode disposed on the second etch stop layer and that extends in the second horizontal direction.
