17886921. SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Yun Chen Teng of New Taipei City (TW)

Chen-Fong Tsai of Hsinchu City (TW)

Li-Chi Yu of Hsinchu County (TW)

Huicheng Chang of Tainan City (TW)

Yee-Chia Yeo of Hsinchu City (TW)

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 17886921 titled 'SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

Simplified Explanation

The method described in the patent application involves a process for fabricating fin structures on a semiconductor substrate, including the use of a steam annealing process on a flowable oxide material.

• Forming fin structures upwardly extending above a semiconductor substrate
• Conformally depositing a first dielectric layer over the fin structures
• Depositing a flowable oxide over the first dielectric layer and between the fin structures
• Performing a steam annealing process at a temperature lower than about 500°C to cure the flowable oxide
• Etching the cured flowable oxide until its top surface is lower than the top surfaces of the fin structures
• Forming a second dielectric layer over the cured flowable oxide
• Forming gate structures and source/drain regions on the fin structures

Potential applications of this technology: - Semiconductor device manufacturing - Integrated circuit fabrication

Problems solved by this technology: - Improving the performance and reliability of semiconductor devices - Enhancing the scalability of integrated circuits

Benefits of this technology: - Enhanced electrical properties of the semiconductor devices - Increased integration density on the semiconductor substrate - Improved process control and manufacturability of the devices

Original Abstract Submitted

A method includes forming fin structures upwardly extending above a semiconductor substrate; conformally depositing a first dielectric layer over the fin structures; depositing a flowable oxide over the first dielectric layer and between the fin structures; performing, at a temperature lower than about 500° C., a steam annealing process on the flowable oxide to cure the flowable oxide; after performing the steam annealing process, etching the cured flowable oxide until a top surface of the cured flowable oxide is lower than top surfaces of the fin structures; forming a second dielectric layer over the cured flowable oxide; forming a first gate structure extending across a first one of the fin structures and a second gate structure extending across a second one of the fin structures; forming first sources/drain regions on the first one of the fin structures and second sources/drain regions on the second one of the fin structures.