18128061. Epitaxial Structures In Semiconductor Devices simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

Epitaxial Structures In Semiconductor Devices

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Cheng-Wei Chang of Taipei City (TW)

Shahaji B. More of Hsinchu City (TW)

Lun-Kuang Tan of Hsinchu City (TW)

Chi-Yu Chou of Hsinchu City (TW)

Yueh-Ching Pai of Taichung City (TW)

Epitaxial Structures In Semiconductor Devices - A simplified explanation of the abstract

This abstract first appeared for US patent application 18128061 titled 'Epitaxial Structures In Semiconductor Devices

Simplified Explanation

The abstract describes a semiconductor device and a method of fabricating it. The device includes a substrate, a fin base, nanostructured channel regions, a gate structure, a source/drain region, an air spacer, and a dielectric layer.

• The semiconductor device is made up of multiple components that work together to perform various functions.
• The fin base is a part of the device that is placed on the substrate.
• The nanostructured channel regions are stacked on a portion of the fin base and play a crucial role in the device's operation.
• The gate structure surrounds the nanostructured channel regions and helps control the flow of current.
• The source/drain region is located on another portion of the fin base and is responsible for providing input/output connections.
• An air spacer is placed between the source/drain region and the fin base, providing insulation and preventing interference.
• A dielectric layer is placed between the air spacer and the fin base, further enhancing insulation and protection.

Potential applications of this technology:

• This semiconductor device can be used in various electronic devices, such as smartphones, computers, and tablets.
• It can also be used in advanced computing systems, data centers, and high-performance computing applications.

Problems solved by this technology:

• The nanostructured channel regions and the gate structure help improve the performance and efficiency of the semiconductor device.
• The air spacer and dielectric layer provide insulation and protection, reducing interference and enhancing the device's reliability.

Benefits of this technology:

• The semiconductor device offers improved performance and efficiency compared to traditional devices.
• It provides better insulation and protection, resulting in enhanced reliability and durability.
• The device can be used in a wide range of electronic applications, making it versatile and adaptable.

Original Abstract Submitted

A semiconductor device and a method of fabricating the semiconductor device are disclosed. The semiconductor device includes a substrate, a fin base disposed on the substrate, a stack of nanostructured channel regions disposed on a first portion of the fin base, a gate structure surrounding the nanostructured channel regions, a source/drain (S/D) region disposed on a second portion of the fin base, an air spacer disposed between the S/D region and the fin base, and a dielectric layer disposed between the air spacer and the fin base.