18517276. CELL STRUCTURE HAVING DIFFERENT POLY EXTENSION LENGTHS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
CELL STRUCTURE HAVING DIFFERENT POLY EXTENSION LENGTHS
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Hui-Zhong Zhuang of Hsinchu (TW)
Chih-Liang Chen of Hsinchu (TW)
CELL STRUCTURE HAVING DIFFERENT POLY EXTENSION LENGTHS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18517276 titled 'CELL STRUCTURE HAVING DIFFERENT POLY EXTENSION LENGTHS
Simplified Explanation
The method described in the patent application involves creating a layout design of an integrated circuit by taking into account the difference between the poly extension effect of a p-type transistor and an n-type transistor.
- Form first-type active zone patterns
- Form second-type active zone patterns
- Generate a gate-strip pattern
- Position the gate-strip pattern over the first-type and second-type active zone patterns
- Determine whether to generate one or more poly cut patterns that intersect the gate-strip based on the difference in poly extension effects between p-type and n-type transistors
Potential Applications
- Semiconductor manufacturing
- Integrated circuit design
Problems Solved
- Optimizing layout design for different types of transistors
- Improving performance and reliability of integrated circuits
Benefits
- Enhanced efficiency in semiconductor manufacturing
- Better control over transistor characteristics
- Increased overall performance of integrated circuits
Original Abstract Submitted
A method includes creating a layout design of the integrated circuit after determining a difference between the poly extension effect of a p-type transistor and the poly extension effect of an n-type transistor. Creating the layout design includes forming first-type active zone patterns, forming second-type active zone patterns, generating a gate-strip pattern, and positioning the gate-strip pattern over the first-type active zone patterns and the second-type active zone patterns. Creating the layout design also includes determining whether to generate one or more poly cut patterns that intersect the gate-strip, based on the difference between the poly extension effect of a p-type transistor and the poly extension effect of an n-type transistor.
