18526385. INTEGRATED CIRCUIT DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
- 1 INTEGRATED CIRCUIT DEVICE
INTEGRATED CIRCUIT DEVICE
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Wen-Hsien Tu of New Taipei City (TW)
Dong-Jie Ke of Taichung City (TW)
INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18526385 titled 'INTEGRATED CIRCUIT DEVICE
Simplified Explanation
The integrated circuit device described in the patent application consists of a semiconductor substrate with first and second semiconductor fins on top of it, along with first and second epitaxy structures on the respective fins. The first epitaxy structure merges with the second epitaxy structure, and the bottom surface of the second epitaxy structure is lower than the bottom surface of the first epitaxy structure.
- Semiconductor substrate with first and second semiconductor fins
- First and second epitaxy structures on the respective fins
- Merging of the first and second epitaxy structures
- Lower bottom surface of the second epitaxy structure compared to the first epitaxy structure
Potential Applications
The technology described in the patent application could potentially be used in:
- Advanced semiconductor devices
- High-performance integrated circuits
- Next-generation electronic devices
Problems Solved
This technology addresses the following issues:
- Improved performance and efficiency of integrated circuits
- Enhanced semiconductor device capabilities
- Better integration of semiconductor components
Benefits
The benefits of this technology include:
- Increased speed and reliability of electronic devices
- Enhanced functionality of integrated circuits
- Improved overall performance of semiconductor devices
Potential Commercial Applications
The technology could find commercial applications in:
- Consumer electronics
- Telecommunications
- Automotive industry
Possible Prior Art
One possible prior art for this technology could be the use of epitaxy structures on semiconductor fins in integrated circuits. However, the specific configuration described in the patent application may be novel and inventive.
Unanswered Questions
How does this technology compare to existing semiconductor manufacturing processes?
This article does not provide a direct comparison between this technology and existing semiconductor manufacturing processes.
What are the potential challenges in implementing this technology on a large scale?
The article does not address the potential challenges in implementing this technology on a large scale, such as cost, scalability, or compatibility with existing manufacturing processes.
Original Abstract Submitted
An integrated circuit device is provided. The integrated circuit device includes a semiconductor substrate, first and second semiconductor fins over the semiconductor substrate, and first and second epitaxy structures respectively on the first and second semiconductor fins. The first epitaxy structure is merged with the second epitaxy structure, and a bottom surface of the second epitaxy structure is lower than a bottom surface of the first epitaxy structure.
