18188314. Crystallization of High-K Dielectric Layer simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

Crystallization of High-K Dielectric Layer

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Chien-Chang Chen of New Taipei City (TW)

Crystallization of High-K Dielectric Layer - A simplified explanation of the abstract

This abstract first appeared for US patent application 18188314 titled 'Crystallization of High-K Dielectric Layer

Simplified Explanation

The present disclosure describes a semiconductor device with a crystalline high-k dielectric layer. The semiconductor structure includes a fin structure on a substrate, a gate dielectric layer on the fin structure, and a gate structure on the gate dielectric layer. A top portion of the gate dielectric layer is crystalline and includes a crystalline high-k dielectric material.

• Explanation of the patent/innovation:

 * Semiconductor device with a crystalline high-k dielectric layer
 * Includes a fin structure, gate dielectric layer, and gate structure
 * Top portion of gate dielectric layer is crystalline with high-k dielectric material

• • Potential Applications:**

The technology can be applied in the development of advanced semiconductor devices, such as high-performance transistors and integrated circuits.

• • Problems Solved:**

1. Improved performance and efficiency of semiconductor devices. 2. Enhanced reliability and stability of the gate dielectric layer.

• • Benefits:**

1. Increased speed and functionality of electronic devices. 2. Reduction in power consumption and heat generation. 3. Longer lifespan and durability of semiconductor components.

• • Potential Commercial Applications of this Technology:**

Optimizing semiconductor manufacturing processes for increased efficiency and performance.

• • Possible Prior Art:**

Prior art may include patents related to high-k dielectric materials in semiconductor devices or advancements in gate dielectric layers.

1. 1. 1. Unanswered Questions:
         1. How does the crystalline high-k dielectric layer impact the overall performance of the semiconductor device?

The article does not delve into specific details regarding the direct influence of the crystalline high-k dielectric layer on the device's performance metrics.

1. 1. 1. 1. Are there any limitations or challenges associated with implementing a crystalline high-k dielectric layer in semiconductor devices?

The article does not address any potential drawbacks or obstacles that may arise when integrating a crystalline high-k dielectric layer into semiconductor structures.

Original Abstract Submitted

The present disclosure describes a semiconductor device having a crystalline high-k dielectric layer. The semiconductor structure includes a fin structure on a substrate, a gate dielectric layer on the fin structure, and a gate structure on the gate dielectric layer. A top portion of the gate dielectric layer is crystalline and includes a crystalline high-k dielectric material.