18475441. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICES
Organization Name
Inventor(s)
SOOJIN Jeong of Bucheon-si (KR)
DONG IL Bae of Seongnam-si (KR)
SEUNGMIN Song of Hwaseong-si (KR)
JUNGGIL Yang of Hwaseong-si (KR)
SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18475441 titled 'SEMICONDUCTOR DEVICES
Simplified Explanation
The semiconductor device described in the patent application includes various patterns and electrodes on a substrate. Here is a simplified explanation of the abstract:
- The device has first and second channel patterns on a substrate.
- There are first and second source/drain patterns in contact with the first and second channel patterns.
- First and second gate electrodes overlap the first and second channel patterns.
- The first gate electrode has a segment between first and second semiconductor patterns of the first channel pattern.
- This segment includes a convex portion that protrudes towards the first source/drain pattern.
- The second gate electrode has a segment between third and fourth semiconductor patterns of the second channel pattern.
- This segment includes a concave portion that is recessed towards the center of the second segment.
Potential Applications of this Technology:
- Integrated Circuits (ICs): The semiconductor device can be used in the fabrication of ICs, which are essential components in various electronic devices such as computers, smartphones, and televisions.
- Microprocessors: The device's channel patterns and gate electrodes can be utilized in the production of microprocessors, which are the central processing units of computers and other digital devices.
- Memory Devices: The technology can be applied to create memory devices like RAM (Random Access Memory) and ROM (Read-Only Memory) chips, which are crucial for data storage and retrieval in electronic systems.
Problems Solved by this Technology:
- Improved Performance: The design of the gate electrodes with convex and concave portions enhances the performance of the semiconductor device by optimizing the control of electrical signals, resulting in better overall functionality.
- Reduction of Signal Interference: The specific arrangement of the channel patterns and gate electrodes helps minimize signal interference, leading to improved signal integrity and reduced noise in electronic circuits.
Benefits of this Technology:
- Enhanced Efficiency: The semiconductor device's improved performance and reduced signal interference contribute to increased efficiency in electronic systems, allowing for faster and more reliable operation.
- Higher Integration Density: The design enables higher integration density, meaning that more components can be packed into a smaller area on a chip, leading to more compact and powerful electronic devices.
- Cost-Effectiveness: The technology's potential for improved performance and higher integration density can lead to cost savings in the production of semiconductor devices, making them more affordable for consumers.
Original Abstract Submitted
A semiconductor device may include first and second channel patterns on a substrate, first and second source/drain patterns in contact respectively with the first and second channel patterns, and first and second gate electrodes respectively overlapping the first and second channel patterns. The first gate electrode may include a first segment between first and second semiconductor patterns of the first channel pattern. The first segment may include a first convex portion protruding toward the first source/drain pattern. The second gate electrode may include a second segment between third and fourth semiconductor patterns of the second channel pattern. The second segment may include a concave portion recessed toward a center of the second segment.
