18196191. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Hyohoon Byeon of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18196191 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The patent application describes a semiconductor device that includes two transistor structures on a substrate.
- The first transistor structure has multiple layers called channel layers, which are spaced apart from each other.
- The first transistor structure also includes a gate electrode that surrounds the channel layers, a source/drain region connected to the channel layers on one side of the gate electrode, and another source/drain region connected to the channel layers on the opposite side of the gate electrode.
- The second transistor structure is built on top of the first transistor structure and has similar components, including multiple channel layers, a gate electrode surrounding the channel layers, and a source/drain region connected to the channel layers on one side of the gate electrode.
Potential applications of this technology:
- This semiconductor device can be used in various electronic devices such as smartphones, computers, and other consumer electronics.
- It can also be used in industrial applications where high-performance and efficient semiconductor devices are required.
Problems solved by this technology:
- The design of the semiconductor device allows for better control and manipulation of electrical signals, leading to improved performance and efficiency.
- The use of multiple channel layers and source/drain regions enhances the functionality and reliability of the device.
Benefits of this technology:
- The semiconductor device offers increased speed and performance due to the presence of multiple channel layers and source/drain regions.
- It provides better control over electrical signals, resulting in improved efficiency and power consumption.
- The design allows for compact and integrated circuitry, enabling smaller and more portable electronic devices.
Original Abstract Submitted
A semiconductor device includes a first transistor structure on a substrate, the first transistor structure including first channel layers spaced apart from each other, a first gate electrode surrounding the first channel layers, a first source/drain region connected to the first channel layers on a first side of the first gate electrode, and a second source/drain region connected to the first channel layers on a second side of the first gate electrode that is opposite to the first side of the first gate electrode, and a second transistor structure on the first transistor structure, the second transistor structure including second channel layers spaced apart from each other, a second gate electrode surrounding the second channel layers, and a third source/drain region connected to the second channel layers on a first side of the second gate electrode.
