18097263. SEMICONDUCTOR DEVICE STRUCTURE INCLUDING FORKSHEET TRANSISTORS AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

SEMICONDUCTOR DEVICE STRUCTURE INCLUDING FORKSHEET TRANSISTORS AND METHODS OF FORMING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Ta-Chun Lin of Hsinchu (TW)

Chih-Hung Hsieh of Hsinchu (TW)

Chun-Sheng Liang of Changhua (TW)

Wen-Chiang Hong of Taipei (TW)

Chun-Wing Yeung of Hsinchu (TW)

Kuo-Hua Pan of Hsinchu (TW)

Chih-Hao Chang of Hsinchu (TW)

Jhon Jhy Liaw of Hsinchu (TW)

SEMICONDUCTOR DEVICE STRUCTURE INCLUDING FORKSHEET TRANSISTORS AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18097263 titled 'SEMICONDUCTOR DEVICE STRUCTURE INCLUDING FORKSHEET TRANSISTORS AND METHODS OF FORMING THE SAME

Simplified Explanation

The semiconductor device structure described in the abstract includes multiple semiconductor layers stacked vertically and surrounded by gate electrode layers of different conductivity types. Here are some key points to explain this innovation:

• The structure consists of a first dielectric wall with first semiconductor layers extending from one side and second semiconductor layers extending from the other side.
• Each first semiconductor layer has a first width, while each second semiconductor layer has a second width.
• Third semiconductor layers with a greater width than the second layers are positioned adjacent to the second side of the first dielectric wall.
• A first gate electrode layer surrounds the first semiconductor layers, while a second gate electrode layer surrounds the second semiconductor layers.
• The first gate electrode layer has a conductivity type different from the second gate electrode layer.

Potential Applications

This semiconductor device structure could be used in:

• High-performance transistors
• Power electronics
• Integrated circuits

Problems Solved

This technology helps address issues related to:

• Gate control in semiconductor devices
• Efficiency and performance of electronic components

Benefits

The benefits of this technology include:

• Improved transistor performance
• Enhanced gate control
• Higher efficiency in electronic devices

Potential Commercial Applications

With its advantages in performance and efficiency, this technology could find applications in:

• Consumer electronics
• Automotive electronics
• Telecommunications

Possible Prior Art

One possible prior art could be the use of gate electrode layers in semiconductor devices to control the flow of current. However, the specific configuration described in this patent application may be novel and inventive.

How does this technology compare to existing semiconductor structures in terms of efficiency and performance?

This article provides information on the structure and design of the semiconductor device, but it does not directly compare its performance and efficiency with existing technologies. Further research or testing may be needed to address this question.

What are the potential challenges or limitations of implementing this technology in practical applications?

While the abstract outlines the structure and functionality of the semiconductor device, it does not discuss any challenges or limitations that may arise during the implementation of this technology. Understanding these factors is crucial for assessing the feasibility of commercializing this innovation.

Original Abstract Submitted

A semiconductor device structure includes a first dielectric wall, a plurality of first semiconductor layers vertically stacked and extending outwardly from a first side of the first dielectric wall, each first semiconductor layer has a first width, a plurality of second semiconductor layers vertically stacked and extending outwardly from a second side of the first dielectric wall, each second semiconductor layer has a second width, a plurality of third semiconductor layers disposed adjacent the second side of the first dielectric wall, each third semiconductor layer has a third width greater than the second width, a first gate electrode layer surrounding at least three surfaces of each of the first semiconductor layers, the first gate electrode layer having a first conductivity type, and a second gate electrode layer surrounding at least three surfaces of each of the second semiconductor layers, the second gate electrode layer having a second conductivity type opposite the first conductivity type.