18152775. SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Yi-Ren Chen of Taoyuan City (TW)
Shih-Hsun Chang of Hsinchu (TW)
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18152775 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
Simplified Explanation
The semiconductor device described in the patent application consists of a substrate with a nanosheet mesa, a stack of semiconductor nanosheets on the mesa, a dielectric wall crossing through the nanosheet mesa and stack of nanosheets, and a gate structure wrapping the stack of nanosheets and crossing over the dielectric wall with a recess at the top.
- The device includes a substrate with a nanosheet mesa.
- A stack of semiconductor nanosheets is placed on the nanosheet mesa.
- A dielectric wall passes through the nanosheet mesa and the stack of nanosheets.
- A gate structure wraps the stack of semiconductor nanosheets and crosses over the dielectric wall with a recess at the top.
Potential Applications
The technology described in this patent application could potentially be used in:
- Advanced semiconductor devices
- Nanoelectronics
- High-performance computing
Problems Solved
This technology addresses the following issues:
- Enhancing semiconductor device performance
- Improving efficiency in nanoscale electronics
- Increasing integration density in electronic devices
Benefits
The semiconductor device outlined in the patent application offers the following benefits:
- Higher performance capabilities
- Enhanced efficiency in electronic devices
- Increased integration density for compact designs
Original Abstract Submitted
A semiconductor device includes a substrate, a stack of semiconductor nanosheets, a dielectric wall, and a gate structure. The substrate includes a nanosheet mesa, and the stack of semiconductor nanosheets is disposed on the nanosheet mesa. The dielectric wall crosses through the nanosheet mesa and the stack of semiconductor nanosheets. The gate structure wraps the stack of semiconductor nanosheets and crosses over the dielectric wall, wherein a top of the dielectric wall has a recess.
