Intel corporation (20240105854). TRANSISTOR STRUCTURES WITH A METAL OXIDE CONTACT BUFFER AND A METHOD OF FABRICATING THE TRANSISTOR STRUCTURES simplified abstract

TRANSISTOR STRUCTURES WITH A METAL OXIDE CONTACT BUFFER AND A METHOD OF FABRICATING THE TRANSISTOR STRUCTURES

Organization Name

intel corporation

Inventor(s)

Gilbert Dewey of Hillsboro OR (US)

Abhishek Sharma of Hillsboro OR (US)

Van Le of Beaverton OR (US)

Jack Kavalieros of Portland OR (US)

Shriram Shivaraman of Hillsboro OR (US)

Seung Hoon Sung of Portland OR (US)

Tahir Ghani of Portland OR (US)

Arnab Sen Gupta of Beaverton OR (US)

Nazila Haratipour of Hillsboro OR (US)

Justin Weber of Portland OR (US)

TRANSISTOR STRUCTURES WITH A METAL OXIDE CONTACT BUFFER AND A METHOD OF FABRICATING THE TRANSISTOR STRUCTURES - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240105854 titled 'TRANSISTOR STRUCTURES WITH A METAL OXIDE CONTACT BUFFER AND A METHOD OF FABRICATING THE TRANSISTOR STRUCTURES

Simplified Explanation

The abstract of the patent application describes a transistor structure that includes a metal oxide contact buffer between a channel material and a source or drain contact metallization. This contact buffer helps control the transistor channel length by limiting reactions between the contact metallization and the channel material, where the channel material is of a first composition and the contact buffer is of a second composition.

• The patent application describes a transistor structure with a metal oxide contact buffer.
• The contact buffer helps control the transistor channel length by limiting reactions between contact metallization and the channel material.
• The channel material and contact buffer have different compositions.

Potential Applications

The technology described in the patent application could be applied in:

• Semiconductor devices
• Integrated circuits
• Transistor manufacturing

Problems Solved

The technology addresses the following issues:

• Controlling transistor channel length
• Limiting reactions between contact metallization and channel material

Benefits

The benefits of this technology include:

• Improved transistor performance
• Enhanced control over device characteristics
• Increased reliability and longevity of semiconductor devices

Potential Commercial Applications

The technology could have commercial applications in:

• Electronics industry
• Semiconductor manufacturing sector
• Consumer electronics market

Possible Prior Art

One possible prior art related to this technology is the use of different contact materials in semiconductor devices to improve device performance.

How does the contact buffer composition affect transistor performance?

The composition of the contact buffer may influence the reaction between the contact metallization and the channel material, thereby impacting transistor performance.

What are the specific materials used in the contact buffer and channel material?

The patent application mentions a metal oxide contact buffer and a channel material of a first composition, but the specific materials are not disclosed.

Original Abstract Submitted

transistor structures may include a metal oxide contact buffer between a portion of a channel material and source or drain contact metallization. the contact buffer may improve control of transistor channel length by limiting reaction between contact metallization and the channel material. the channel material may be of a first composition and the contact buffer may be of a second composition.