18519486. SEMICONDUCTOR DEVICE, METHOD OF AND SYSTEM FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
- 1 SEMICONDUCTOR DEVICE, METHOD OF AND SYSTEM FOR MANUFACTURING SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE, METHOD OF AND SYSTEM FOR MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE, METHOD OF AND SYSTEM FOR MANUFACTURING SEMICONDUCTOR DEVICE
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Hui-Zhong Zhuang of Hsinchu (TW)
Chih-Liang Chen of Hsinchu (TW)
SEMICONDUCTOR DEVICE, METHOD OF AND SYSTEM FOR MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18519486 titled 'SEMICONDUCTOR DEVICE, METHOD OF AND SYSTEM FOR MANUFACTURING SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract includes multiple layers and conductors connected through vias. Here is a simplified explanation of the patent application:
- The device has a first metal layer with two conductors extending in one direction, and a second metal layer with a conductor extending in a different direction.
- A drain/source contact is connected to one of the conductors, and at least one conductive via connects the conductors through the third conductor.
Potential Applications
This technology could be used in various electronic devices such as integrated circuits, microprocessors, and memory chips.
Problems Solved
This innovation helps in improving the performance and efficiency of semiconductor devices by providing efficient connections between different layers and conductors.
Benefits
The benefits of this technology include enhanced functionality, increased speed, and reduced power consumption in semiconductor devices.
Potential Commercial Applications
The technology can be applied in the manufacturing of advanced electronic devices for consumer electronics, telecommunications, automotive, and industrial applications.
Possible Prior Art
One possible prior art could be the use of similar multi-layered structures in semiconductor devices for improved connectivity and performance.
Unanswered Questions
How does this technology compare to existing semiconductor devices in terms of efficiency and performance?
This article does not provide a direct comparison with existing semiconductor devices to assess the efficiency and performance improvements offered by this technology.
What are the specific manufacturing processes involved in creating this semiconductor device?
The article does not detail the specific manufacturing processes involved in creating this semiconductor device, such as deposition techniques, lithography, and etching methods.
Original Abstract Submitted
A semiconductor device, includes a first metal layer, a second metal layer, a drain/source contact and at least one conductive via. The first metal layer has a first conductor that extends in a first direction and a second conductor that extends in the first direction, wherein the second conductor is directly adjacent to the first conductor. The second metal layer has a third conductor that extends in a second direction, wherein the second direction is transverse to the first direction. The drain/source contact extends in the second direction and is connected to the second conductor. The at least one conductive via connects the first conductor and the second conductor through the third conductor.
