17958293. EPITAXIAL STRUCTURE AND GATE METAL STRUCTURES WITH A PLANAR TOP SURFACE simplified abstract (Intel Corporation)

EPITAXIAL STRUCTURE AND GATE METAL STRUCTURES WITH A PLANAR TOP SURFACE

Organization Name

Intel Corporation

Inventor(s)

Dan S. Lavric of Beaverton OR (US)

YenTing Chiu of Portland OR (US)

Tahir Ghani of Portland OR (US)

Leonard P. Guler of Hillsboro OR (US)

Mohammad Hasan of Aloha OR (US)

Aryan Navabi-shirazi of Portland OR (US)

Anand S. Murthy of Portland OR (US)

Wonil Chung of Hillsboro OR (US)

Allen B. Gardiner of Portland OR (US)

EPITAXIAL STRUCTURE AND GATE METAL STRUCTURES WITH A PLANAR TOP SURFACE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17958293 titled 'EPITAXIAL STRUCTURE AND GATE METAL STRUCTURES WITH A PLANAR TOP SURFACE

Simplified Explanation

Embodiments described herein may be related to apparatuses, processes, systems, and/or techniques for integrated circuit structures that include self-aligned metal gates, self-aligned epitaxial structure, self-aligned terminal contacts over the epitaxial structure, and removal of poly material around a gate during integrated circuit structure manufacture, using a tub gate architecture. Other embodiments may be described and/or claimed.

• Self-aligned metal gates in integrated circuit structures
• Self-aligned epitaxial structure in integrated circuit manufacturing
• Self-aligned terminal contacts over epitaxial structures
• Removal of poly material around gates using tub gate architecture

Potential Applications

The technology described in this patent application could be applied in the following areas:

• Semiconductor manufacturing
• Integrated circuit design
• Electronics industry

Problems Solved

The innovation presented in this patent application addresses the following issues:

• Improving the precision and efficiency of integrated circuit manufacturing processes
• Enhancing the performance and reliability of integrated circuit structures
• Streamlining the fabrication of complex semiconductor devices

Benefits

By implementing the techniques described in this patent application, the following benefits can be achieved:

• Higher quality integrated circuit structures
• Increased productivity in semiconductor manufacturing
• Cost-effective production of advanced electronic components

Potential Commercial Applications

A potential commercial application of this technology could be in:

• Semiconductor fabrication facilities
• Electronics companies
• Research institutions

Possible Prior Art

One possible prior art in this field could be the use of self-aligned processes in semiconductor manufacturing, such as self-aligned silicide formation or self-aligned contact structures.

How does this technology compare to existing methods in terms of cost-effectiveness?

The cost-effectiveness of implementing this technology compared to traditional methods is not explicitly addressed in the patent application. Further analysis and comparison would be needed to determine the economic advantages of this innovation.

What impact does this technology have on the overall performance of integrated circuits?

While the patent application mentions improvements in performance and reliability, specific data on the impact of this technology on the overall performance of integrated circuits is not provided. Conducting performance tests and evaluations would be necessary to assess the full extent of the benefits.

Original Abstract Submitted

Embodiments described herein may be related to apparatuses, processes, systems, and/or techniques for integrated circuit structures that include self-aligned metal gates, self-aligned epitaxial structure, self-aligned terminal contacts over the epitaxial structure, and removal of poly material around a gate during integrated circuit structure manufacture, using a tub gate architecture. Other embodiments may be described and/or claimed.