17933882. COMPOSITE NANOSHEET TUNNEL TRANSISTORS simplified abstract (International Business Machines Corporation)
Contents
- 1 COMPOSITE NANOSHEET TUNNEL TRANSISTORS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 COMPOSITE NANOSHEET TUNNEL TRANSISTORS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
COMPOSITE NANOSHEET TUNNEL TRANSISTORS
Organization Name
International Business Machines Corporation
Inventor(s)
Kirsten Emilie Moselund of Rüschlikon (CH)
Nicolas Jean Loubet of GUILDERLAND NY (US)
Bogdan Cezar Zota of Rüschlikon (CH)
Shogo Mochizuki of Mechanicville NY (US)
COMPOSITE NANOSHEET TUNNEL TRANSISTORS - A simplified explanation of the abstract
This abstract first appeared for US patent application 17933882 titled 'COMPOSITE NANOSHEET TUNNEL TRANSISTORS
Simplified Explanation
The present invention involves the implantation of composite tunnel field effect transistors (TFETs) in a nanosheet process. In one embodiment, the invention includes forming source/drain regions with different compositions and doping types, creating a composite channel structure with a nanosheet and channel epitaxy, and connecting the channel epitaxy laterally to the extension portions of the source/drain regions.
- Formation of composite tunnel field effect transistors (TFETs) in a nanosheet process
- Source/drain regions with different compositions and doping types
- Composite channel structure with nanosheet and channel epitaxy
- Lateral connection of channel epitaxy to source/drain regions
Potential Applications
The technology could be applied in:
- Semiconductor industry for advanced transistors
- Electronics for high-performance devices
Problems Solved
This technology helps in:
- Improving transistor performance
- Enhancing device efficiency
Benefits
The benefits of this technology include:
- Increased speed and efficiency of transistors
- Reduction in power consumption
Potential Commercial Applications
The technology could be commercially benefit:
- Semiconductor companies
- Electronics manufacturers
Possible Prior Art
One possible prior art could be the development of nanosheet transistors in the semiconductor industry.
Unanswered Questions
How does this technology compare to traditional transistor designs?
This article does not provide a direct comparison between this technology and traditional transistor designs.
What are the specific performance improvements achieved with this technology?
The article does not detail the specific performance improvements achieved with this technology.
Original Abstract Submitted
Embodiments of the present invention are directed to the implantation of composite tunnel field effect transistors (TFETs) in a nanosheet process. In a non-limiting embodiment of the invention, a first source or drain region is formed having a first composition and a first doping type. A second source or drain region is formed having a second composition and a second doping type opposite the first doping type. A first composite channel structure is formed between the first source or drain region and the second source or drain region. The first composite channel structure includes a first nanosheet trimmed to expose extension portions of the first source or drain region and extension portions of the second source or drain region. The first composite channel structure further includes a first channel epitaxy wrapping around the trimmed first nanosheet. The first channel epitaxy is connected laterally to the extension portions.
