18508788. MELT ANNEAL SOURCE AND DRAIN REGIONS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

MELT ANNEAL SOURCE AND DRAIN REGIONS

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Su-Hao Liu of Jhongpu Township (TW)

Wen-Yen Chen of Hsinchu (TW)

Li-Heng Chen of Taichung (TW)

Li-Ting Wang of Hsinchu (TW)

Liang-Yin Chen of Hsinchu (TW)

Huicheng Chang of Tainan City (TW)

Yee-Chia Yeo of Hsinchu (TW)

Ying-Lang Wang of Tien-Chung Village (TW)

MELT ANNEAL SOURCE AND DRAIN REGIONS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18508788 titled 'MELT ANNEAL SOURCE AND DRAIN REGIONS

Simplified Explanation

The method described in the abstract involves forming a gate stack on a semiconductor substrate, removing a portion of the substrate to create a recess, growing a semiconductor region from the recess, implanting the region with an impurity, and performing a melt anneal on the region where at least a portion becomes molten.

• Formation of gate stack on semiconductor substrate
• Removal of portion of substrate to create a recess
• Growth of semiconductor region from the recess
• Implantation of impurity into the semiconductor region
• Melt anneal process on the semiconductor region

Potential Applications

This technology could be applied in the manufacturing of advanced semiconductor devices, such as high-performance transistors and integrated circuits.

Problems Solved

1. Enhancing the performance and efficiency of semiconductor devices. 2. Improving the integration density of components on a semiconductor substrate. 3. Facilitating the production of complex semiconductor structures.

Benefits

1. Increased speed and functionality of semiconductor devices. 2. Higher level of miniaturization and integration on a chip. 3. Enhanced reliability and stability of semiconductor components.

Original Abstract Submitted

A method includes forming a gate stack on a first portion of a semiconductor substrate, removing a second portion of the semiconductor substrate on a side of the gate stack to form a recess, growing a semiconductor region starting from the recess, implanting the semiconductor region with an impurity, and performing a melt anneal on the semiconductor region. At least a portion of the semiconductor region is molten during the melt anneal.