18053157. SEMICONDUCTOR DEVICE MANUFACTURING METHOD simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICE MANUFACTURING METHOD
Organization Name
Inventor(s)
Byung Keun Hwang of Seon gnam-si (KR)
Jeong Ho Mun of Yongin-si (KR)
Hyun-Ji Song of Anyang-si (KR)
Youn Joung Cho of Hwaseong-si (KR)
SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 18053157 titled 'SEMICONDUCTOR DEVICE MANUFACTURING METHOD
Simplified Explanation
The present disclosure describes a method for manufacturing a semiconductor device using selective vapor deposition and selective desorption. The method involves the following steps:
1. Providing a first layer with a first surface. 2. Forming a second layer on the first layer, leaving a portion of the first surface uncovered. 3. The second layer has a second surface that meets the first surface. 4. Applying an inhibitor layer on both the first and second surfaces. 5. Selectively removing the inhibitor layer on the second surface to expose it. 6. Forming an interest layer on the exposed second surface. 7. The first layer and second layer have different physical properties.
- The method involves selective vapor deposition and selective desorption techniques to create a semiconductor device.
- The first layer acts as a base, and the second layer is formed on top of it, leaving a portion of the first surface exposed.
- An inhibitor layer is applied on both the first and second surfaces to control the deposition process.
- The inhibitor layer on the second surface is selectively removed to expose it for further processing.
- An interest layer is then formed on the exposed second surface, adding functionality to the semiconductor device.
- The first and second layers have different physical properties, allowing for specific performance characteristics.
Potential Applications
This technology has potential applications in various fields, including:
- Semiconductor manufacturing industry
- Electronics industry
- Integrated circuit fabrication
- Nanotechnology research
Problems Solved
The method described in the patent application solves several problems in semiconductor device manufacturing, such as:
- Controlling the deposition process on specific areas of a substrate.
- Achieving selective desorption to expose desired surfaces for further processing.
- Creating semiconductor devices with different physical properties in different layers.
- Enhancing the functionality and performance of semiconductor devices.
Benefits
The use of selective vapor deposition and selective desorption in semiconductor device manufacturing offers several benefits, including:
- Improved control over the deposition process, leading to precise and accurate device fabrication.
- Selective desorption allows for targeted exposure of specific surfaces, enabling further customization.
- The ability to create semiconductor devices with different physical properties in different layers enhances performance and functionality.
- This method can be applied to various semiconductor materials and structures, increasing versatility.
Original Abstract Submitted
The present disclosure provides a method for manufacturing a semiconductor device using selective vapor deposition and selective desorption. The method for manufacturing a semiconductor device includes providing a first layer having a first surface, and forming a second layer on the first layer such that a portion of the first surface is not covered by the second layer. The second layer has a second surface that meets the first surface. An inhibitor layer is formed on the first surface and the second surface, and the inhibitor layer on the second surface is selectively removed to expose the second surface. An interest layer is formed on the second surface. Physical properties of the first layer are different from physical properties of the second layer.
