18520326. SILICIDE STRUCTURES IN TRANSISTORS AND METHODS OF FORMING simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
- 1 SILICIDE STRUCTURES IN TRANSISTORS AND METHODS OF FORMING
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SILICIDE STRUCTURES IN TRANSISTORS AND METHODS OF FORMING - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SILICIDE STRUCTURES IN TRANSISTORS AND METHODS OF FORMING
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
SILICIDE STRUCTURES IN TRANSISTORS AND METHODS OF FORMING - A simplified explanation of the abstract
This abstract first appeared for US patent application 18520326 titled 'SILICIDE STRUCTURES IN TRANSISTORS AND METHODS OF FORMING
Simplified Explanation
The patent application describes a device with a gate stack, gate spacer, source/drain region, silicide, and source/drain contact. The silicide includes a metal and silicon conformal first portion in the source/drain region, as well as a metal, silicon, and nitrogen conformal second portion over the first portion and on the gate spacer sidewall.
- The device includes a gate stack, gate spacer, source/drain region, silicide, and source/drain contact.
- The silicide has a metal and silicon conformal first portion in the source/drain region.
- A metal, silicon, and nitrogen conformal second portion of the silicide is on the gate spacer sidewall.
Potential Applications
This technology could be applied in the semiconductor industry for advanced integrated circuits and microprocessors.
Problems Solved
This innovation helps improve the electrical performance and reliability of semiconductor devices by enhancing the contact resistance and reducing parasitic resistance.
Benefits
The technology offers increased efficiency, speed, and overall performance of electronic devices. It also contributes to the miniaturization of semiconductor components.
Potential Commercial Applications
Optimizing Silicide Technology for Enhanced Semiconductor Devices
Possible Prior Art
Prior art may include similar techniques for improving contact resistance and reducing parasitic resistance in semiconductor devices.
Unanswered Questions
How does this technology compare to existing methods for enhancing contact resistance in semiconductor devices?
This article does not provide a direct comparison with other methods or technologies currently used in the industry.
What specific electronic devices or applications could benefit the most from this technology?
The article does not specify which types of electronic devices or applications would see the greatest improvements from implementing this technology.
Original Abstract Submitted
A device includes a gate stack; a gate spacer on a sidewall of the gate stack; a source/drain region adjacent the gate stack; a silicide; and a source/drain contact electrically connected to the source/drain region through the silicide. The silicide includes a conformal first portion in the source/drain region, the conformal first portion comprising a metal and silicon; and a conformal second portion over the conformal first portion, the conformal second portion further disposed on a sidewall of the gate spacer, the conformal second portion comprising the metal, silicon, and nitrogen.
