18486331. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Dongwon Kim of Seongnam-si (KR)
Yonghee Park of Hwaseong-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18486331 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the patent application includes two active patterns on a substrate, a gate electrode on each of the channel patterns, active contacts connected to the source/drain patterns, a gate contact connected to the gate electrode, a metal layer with power lines, and gate cutting patterns below the power lines. The first active pattern has a channel pattern between a pair of source/drain patterns, and the second active pattern has a channel pattern between another pair of source/drain patterns. The gate cutting patterns cover the outermost side surfaces of the channel patterns.
- The semiconductor device has two active patterns on a substrate, allowing for increased functionality and performance.
- The gate electrodes on the channel patterns enable control of the flow of current.
- The active contacts provide electrical connections to the source/drain patterns, ensuring proper functionality.
- The gate contact is electrically connected to the gate electrode, facilitating control of the device.
- The metal layer with power lines allows for efficient power distribution.
- The gate cutting patterns below the power lines protect the channel patterns from external influences.
Potential Applications
- This semiconductor device can be used in various electronic devices, such as smartphones, tablets, and computers.
- It can be applied in power management systems, allowing for efficient control and distribution of power.
Problems Solved
- The device solves the problem of controlling the flow of current in a semiconductor device.
- It addresses the need for efficient power distribution in electronic devices.
- The gate cutting patterns protect the channel patterns from external influences, ensuring reliable operation.
Benefits
- The device provides improved functionality and performance due to the presence of two active patterns.
- Efficient power distribution is achieved through the metal layer with power lines.
- The gate cutting patterns enhance the reliability and durability of the device by protecting the channel patterns.
Original Abstract Submitted
A semiconductor device includes first and second active patterns respectively on the first and second active regions of a substrate, a gate electrode on the first and second channel patterns, active contacts electrically connected to at least one of the first and second source/drain patterns, a gate contact electrically connected to the gate electrode, a first metal layer on the active and gate contacts and including a first and second power line, and first and second gate cutting patterns below the first and second power lines. The first active pattern may include first channel pattern between a pair of first source/drain patterns. The second active pattern may include a second channel pattern between a pair of second source/drain patterns. The first and second gate cutting patterns may cover the outermost side surfaces of the first and second channel patterns, respectively.
