17895323. HYBRID FIN-DIELECTRIC SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

HYBRID FIN-DIELECTRIC SEMICONDUCTOR DEVICE

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Yi-Huan Chen of Hsin Chu City (TW)

Huan-Chih Yuan of Zhubei City (TW)

Yu-Chang Jong of Hsinchu City (TW)

Scott Yeh of Taoyuan City (TW)

Fei-Yun Chen of Hsinchu (TW)

Yi-Hao Chen of Taichung City (TW)

Ting-Wei Chou of Taichung City (TW)

HYBRID FIN-DIELECTRIC SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17895323 titled 'HYBRID FIN-DIELECTRIC SEMICONDUCTOR DEVICE

Simplified Explanation

The present disclosure describes a semiconductor device with a hybrid fin-dielectric region, where a gate electrode is placed above the HFD region. The HFD region consists of fins covered by a dielectric, separating the source and drain regions.

• The semiconductor device includes a substrate, source region, drain region, and HFD region.
• The HFD region contains multiple fins covered by a dielectric material.
• The gate electrode is positioned above the HFD region.
• The dielectric separates the fins from the source and drain regions.

Potential Applications

• Advanced semiconductor devices
• High-performance integrated circuits
• Power-efficient electronics

Problems Solved

• Improved performance and efficiency of semiconductor devices
• Enhanced control over current flow in the device
• Reduction of leakage currents

Benefits

• Higher speed and efficiency in electronic devices
• Better control over power consumption
• Enhanced reliability and longevity of semiconductor devices

Original Abstract Submitted

The present disclosure relates to a semiconductor device with a hybrid fin-dielectric region. The semiconductor device includes a substrate, a source region and a drain region laterally separated by a hybrid fin-dielectric (HFD) region. A gate electrode is disposed above the HFD region and the HFD region includes a plurality of fins covered by a dielectric and separated from the source region and the drain region by the dielectric.