17868401. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
BYUNG-SUNG Kim of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17868401 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The patent application describes a semiconductor device with a specific structure and arrangement of components.
- The device includes a substrate with a trench dividing a first active pattern into two separate patterns.
- The trench is filled with a device isolation layer.
- First source/drain patterns are present on the first active pattern.
- A first channel pattern, consisting of semiconductor patterns, is connected to the first source/drain patterns.
- Adjacent to one side of the trench, there is a first dummy gate electrode that extends.
- A gate electrode is located on the other side of the trench, spaced apart from the first dummy gate electrode.
- The gate electrode runs across the first channel pattern.
- A gate capping pattern is present on the gate electrode.
- A gate contact is connected to the gate electrode.
- A separation pattern extends between the gate electrode and the first dummy gate electrode, with its top surface at the same level as the gate capping pattern.
Potential applications of this technology:
- Semiconductor devices used in various electronic devices such as smartphones, computers, and tablets.
- Integrated circuits for high-performance computing and data processing applications.
- Power management systems for efficient energy usage.
Problems solved by this technology:
- Improved performance and functionality of semiconductor devices.
- Enhanced integration and miniaturization of electronic components.
- Reduction of power consumption and heat generation.
Benefits of this technology:
- Increased speed and efficiency of data processing.
- Higher density of transistors on a chip, leading to more powerful devices.
- Improved power efficiency and longer battery life in portable devices.
Original Abstract Submitted
Disclosed is a semiconductor device including: a substrate including a first active pattern separated into a pair of first active patterns by a trench; a device isolation layer filling the trench; first source/drain patterns on the first active pattern; a first channel pattern connected to the first source/drain patterns and including semiconductor patterns; a first dummy gate electrode that extends while being adjacent to a first sidewall of the trench; a gate electrode that is spaced apart in the first direction from the first dummy gate electrode and extends while running across the first channel pattern, a gate capping pattern on the gate electrode; a gate contact coupled to the gate electrode; and a separation pattern extending between the gate electrode and the first dummy gate electrode. A top surface of the separation pattern is at a same level as that of the gate capping pattern.
