18110330. SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
- 1 SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Chih-Hao Chang of Hsinchu (TW)
SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18110330 titled 'SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME
Simplified Explanation
The semiconductor device structure described in the abstract features a first dielectric wall between an n-type source/drain region and a p-type source/drain region, as well as a second dielectric wall between two channel regions connected to the respective source/drain regions. A contact is formed to connect the n-type and p-type regions, extending over the first dielectric wall which has a gradually decreasing width towards the tip.
- First dielectric wall between n-type and p-type regions
- Second dielectric wall between channel regions
- Contact connecting n-type and p-type regions
- Gradually decreasing width of first dielectric wall
Potential Applications
The technology described in this patent application could be applied in the following areas:
- Semiconductor manufacturing
- Integrated circuits
- Electronics industry
Problems Solved
The innovation addresses the following issues:
- Isolation of n-type and p-type regions
- Efficient connection between source/drain regions
- Improved performance of semiconductor devices
Benefits
The technology offers the following benefits:
- Enhanced device performance
- Increased efficiency in semiconductor manufacturing
- Improved reliability of integrated circuits
Potential Commercial Applications
The technology has potential applications in various commercial sectors, including:
- Consumer electronics
- Telecommunications
- Automotive industry
Possible Prior Art
One possible prior art for this technology could be the use of similar dielectric walls in semiconductor devices to isolate different regions and improve performance.
Unanswered Questions
How does the gradually decreasing width of the first dielectric wall impact device performance?
The abstract mentions a gradually decreasing width of the first dielectric wall towards the tip. It would be interesting to know how this design feature affects the overall performance of the semiconductor device.
What specific materials are used in the construction of the dielectric walls in this semiconductor device structure?
The abstract provides an overview of the structure of the semiconductor device, but it does not delve into the specific materials used in the construction of the dielectric walls. Understanding the materials used could provide insights into the durability and efficiency of the device.
Original Abstract Submitted
A semiconductor device structure is provided. The semiconductor device has a first dielectric wall between an n-type source/drain region and a p-type source/drain region to physically and electrically isolate the n-type source/drain region and the p-type source/drain region from each other. A second dielectric wall is formed between a first channel region connected to the n-type source/drain region and a second channel region connected to the p-type source/drain region. A contact is formed to physically and electrically connect the n-type source/drain region with the p-type source/drain region, wherein the contact extends over the first dielectric wall. The first electric wall has a gradually decreasing width Wtowards a tip of the dielectric wall from a top contact position between the first dielectric wall and either the n-type source/drain region or the p-type source/drain region.
