18477290. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Joong Gun Oh of Hwaseong-si (KR)

Sung Il Park of Suwon-si (KR)

Jae Hyun Park of Hwaseong-si (KR)

Hyung Suk Lee of Suwon-si (KR)

Eun Sil Park of Hwaseong-si (KR)

Yun Il Lee of Anyang-si (KR)

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18477290 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

Simplified Explanation

The semiconductor device described in the abstract includes a fin type pattern, a first gate electrode, a source/drain region, a separation structure, an interlayer insulating layer, and a contact.

• The fin type pattern extends in a first direction on a substrate.
• The first gate electrode extends in a second direction intersecting the first direction on the fin type pattern.
• The source/drain region is located on a side wall of the first gate electrode and in the fin type pattern.
• The separation structure extends in the first direction on the substrate, includes a first trench, and separates the first gate electrode.
• The interlayer insulating layer is on a side wall of the separation structure, covers the source/drain region, and includes a second trench with a lower surface than the first trench.
• The contact is connected to the source/drain region, filling both the first trench and the second trench.

• • Potential Applications:**

- This technology can be used in the manufacturing of advanced semiconductor devices such as transistors.

• • Problems Solved:**

- Provides a structure that allows for efficient separation and insulation of different components in a semiconductor device. - Enables better connectivity and functionality of the device.

• • Benefits:**

- Improved performance and reliability of semiconductor devices. - Enhanced integration capabilities for complex circuit designs.

Original Abstract Submitted

A semiconductor device includes a fin type pattern extending in a first direction on a substrate, a first gate electrode extending in a second direction intersecting the first direction on the fin type pattern, a source/drain region on a side wall of the first gate electrode and in the fin type pattern, a separation structure extending in the first direction on the substrate, the separation structure including a first trench and being spaced apart from the fin type pattern and separating the first gate electrode, an interlayer insulating layer on a side wall of the separation structure and covering the source/drain region, the interlayer insulating layer including a second trench having a lower surface lower than a lower surface of the first trench, and a contact connected to the source/drain region and filling the first trench and the second trench.