18516410. FIELD EFFECT TRANSISTORS WITH DUAL SILICIDE CONTACT STRUCTURES simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

FIELD EFFECT TRANSISTORS WITH DUAL SILICIDE CONTACT STRUCTURES

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Peng-Wei Chu of Hsinchu (TW)

Yasutoshi Okuno of Hsinchu (TW)

Ding-Kang Shih of New Taipei City (TW)

Sung-Li Wang of Hsinchu County (TW)

FIELD EFFECT TRANSISTORS WITH DUAL SILICIDE CONTACT STRUCTURES - A simplified explanation of the abstract

This abstract first appeared for US patent application 18516410 titled 'FIELD EFFECT TRANSISTORS WITH DUAL SILICIDE CONTACT STRUCTURES

Simplified Explanation

The abstract describes a semiconductor device with dual silicide contact structures and a method of fabricating the device. Here are the key points:

• Method involves forming fin structures on a substrate
• Epitaxial regions are formed on the fin structures
• Contact openings are created on the epitaxial regions
• Oxide capping layer is selectively formed on exposed surfaces of one epitaxial region
• Metal silicide layer is selectively formed on exposed surfaces of the other epitaxial region
• Conductive regions are formed on the metal silicide layer and exposed surfaces of the epitaxial region
• First metal silicide layer contains a first metal, while conductive regions contain a second metal different from the first metal

Potential Applications: - Semiconductor manufacturing - Electronics industry - Integrated circuits

Problems Solved: - Improved contact structures in semiconductor devices - Enhanced performance and reliability of devices - Efficient fabrication process

Benefits: - Dual silicide contact structures improve device functionality - Method allows for precise control over material deposition - Enhanced conductivity and performance of semiconductor devices

Original Abstract Submitted

The structure of a semiconductor device with dual silicide contact structures and a method of fabricating the semiconductor device are disclosed. A method of fabricating the semiconductor device includes forming first and second fin structures on a substrate, forming first and second epitaxial regions on the first and second fin structures, respectively, forming first and second contact openings on the first and second epitaxial regions, respectively, selectively forming an oxide capping layer on exposed surfaces of the second epitaxial region, selectively forming a first metal silicide layer on exposed surfaces of the first epitaxial region, removing the oxide capping layer, and forming first and second conductive regions on the metal silicide layer and on the exposed surfaces of the second epitaxial region, respectively. The first metal silicide layer includes a first metal. The first and second conductive regions includes a second metal different from the first metal.