Intel corporation (20240113116). EPITAXIAL STRUCTURE AND GATE METAL STRUCTURES WITH A PLANAR TOP SURFACE simplified abstract

EPITAXIAL STRUCTURE AND GATE METAL STRUCTURES WITH A PLANAR TOP SURFACE

Organization Name

intel corporation

Inventor(s)

Dan S. Lavric of Beaverton OR (US)

YenTing Chiu of Portland OR (US)

Tahir Ghani of Portland OR (US)

Leonard P. Guler of Hillsboro OR (US)

Mohammad Hasan of Aloha OR (US)

Aryan Navabi-shirazi of Portland OR (US)

Anand S. Murthy of Portland OR (US)

Wonil Chung of Hillsboro OR (US)

Allen B. Gardiner of Portland OR (US)

EPITAXIAL STRUCTURE AND GATE METAL STRUCTURES WITH A PLANAR TOP SURFACE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240113116 titled 'EPITAXIAL STRUCTURE AND GATE METAL STRUCTURES WITH A PLANAR TOP SURFACE

Simplified Explanation

The patent application describes apparatuses, processes, systems, and/or techniques for integrated circuit structures with self-aligned metal gates, epitaxial structures, terminal contacts, and removal of poly material around a gate using a tub gate architecture.

• Self-aligned metal gates in integrated circuit structures
• Self-aligned epitaxial structures
• Self-aligned terminal contacts over epitaxial structures
• Removal of poly material around a gate using a tub gate architecture

Potential Applications

The technology described in the patent application could be applied in the semiconductor industry for the manufacturing of advanced integrated circuit structures.

Problems Solved

1. Improved precision and alignment in the fabrication of integrated circuit structures. 2. Enhanced performance and reliability of integrated circuits.

Benefits

1. Increased efficiency in the manufacturing process. 2. Higher quality and more reliable integrated circuit structures. 3. Potential for improved performance of electronic devices.

Potential Commercial Applications

Optimizing Integrated Circuit Structures with Self-Aligned Metal Gates and Epitaxial Structures

Possible Prior Art

Prior art related to self-aligned metal gates, epitaxial structures, and tub gate architectures in integrated circuit manufacturing processes may exist, but specific examples are not provided in the patent application.

Unanswered Questions

How does this technology compare to existing methods for integrated circuit structure manufacture?

The patent application does not provide a direct comparison to existing methods in the semiconductor industry. Further research or analysis would be needed to determine the advantages and limitations of this technology in comparison to current practices.

What are the potential challenges or limitations of implementing this technology on a large scale?

The patent application does not address potential challenges or limitations that may arise when implementing this technology in mass production. Factors such as cost, scalability, and compatibility with existing manufacturing processes could be important considerations that are not discussed in the abstract.

Original Abstract Submitted

embodiments described herein may be related to apparatuses, processes, systems, and/or techniques for integrated circuit structures that include self-aligned metal gates, self-aligned epitaxial structure, self-aligned terminal contacts over the epitaxial structure, and removal of poly material around a gate during integrated circuit structure manufacture, using a tub gate architecture. other embodiments may be described and/or claimed.