17691438. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Jun Mo Park of Seoul (KR)

Yeon Ho Park of Seoul (KR)

Wang Seop Lim of Cheonan-si (KR)

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17691438 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

Simplified Explanation

The semiconductor device described in the patent application aims to enhance the performance and reliability of electronic devices. Here are the key points:

• The device includes an active pattern that extends in one direction.
• A gate structure is placed on the active pattern, extending in a different direction.
• The gate structure consists of a gate insulating layer and a gate filling layer.
• A gate spacer is positioned on the sidewall of the gate structure, extending in the same direction as the gate structure.
• A gate shield insulating pattern covers the upper surface of the gate insulating layer and is made of an insulating material.
• A gate capping pattern is placed on top of the gate filling layer, covering its upper surface.

Potential applications of this technology:

• This semiconductor device can be used in various electronic devices, such as smartphones, tablets, computers, and other consumer electronics.
• It can also be applied in industrial equipment, automotive electronics, and communication devices.

Problems solved by this technology:

• The device improves the performance and reliability of electronic devices by providing a more efficient gate structure.
• It helps to reduce leakage current and improve the overall functionality of the device.

Benefits of this technology:

• Enhanced performance and reliability of electronic devices.
• Improved efficiency and reduced leakage current.
• Increased functionality and overall device performance.

Original Abstract Submitted

There is provided a semiconductor device capable of improving the performance and reliability of a device. The semiconductor device including an active pattern extending in a first direction, a gate structure on the active pattern, the gate structure extending in a second direction different from the first direction and including a gate insulating layer and a gate filling layer, a gate spacer extending in the second direction, on a sidewall of the gate structure, a gate shield insulating pattern on a sidewall of the gate spacer, covering an upper surface of the gate insulating layer, and including an insulating material, and a gate capping pattern covering an upper surface of the gate filling layer, on the gate structure may be provided.