18521975. SEMICONDUCTOR DEVICE AND FABRICATING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
- 1 SEMICONDUCTOR DEVICE AND FABRICATING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND FABRICATING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND FABRICATING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Kuo-Cheng Ching of Hsinchu County (TW)
SEMICONDUCTOR DEVICE AND FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18521975 titled 'SEMICONDUCTOR DEVICE AND FABRICATING THE SAME
Simplified Explanation
The abstract describes an integrated circuit (IC) device with a gate region containing a fin structure and a nanowire over the fin structure, extending from the source feature to the drain feature in the metal-oxide-semiconductor (MOS) region of the substrate.
- The IC device includes a substrate with a MOS region.
- A gate region is located over the substrate in the MOS region.
- Source/drain features are present in the MOS region, separated by the gate region.
- The gate region consists of a fin structure and a nanowire extending over the fin structure.
Potential Applications
This technology could be applied in:
- Advanced semiconductor devices
- High-performance computing systems
- Nanoelectronics research
Problems Solved
This innovation addresses:
- Improved performance and efficiency in IC devices
- Enhanced integration of components in semiconductor technology
Benefits
The benefits of this technology include:
- Higher speed and lower power consumption in electronic devices
- Increased miniaturization and functionality in semiconductor design
Potential Commercial Applications
The potential commercial applications of this technology could be in:
- Consumer electronics
- Telecommunications
- Automotive industry
Possible Prior Art
One possible prior art for this technology could be the use of nanowires in semiconductor devices for improved performance and miniaturization.
Unanswered Questions
How does this technology compare to existing nanowire-based IC devices?
This article does not provide a direct comparison with existing nanowire-based IC devices, leaving a gap in understanding the competitive advantages of this innovation.
What specific manufacturing processes are involved in creating the nanowire over the fin structure in the gate region?
The article does not delve into the detailed manufacturing processes involved in implementing the nanowire over the fin structure, leaving a question about the practicality and scalability of this technology.
Original Abstract Submitted
An integrated circuit (IC) device comprises a substrate having a metal-oxide-semiconductor (MOS) region; a gate region disposed over the substrate and in the MOS region; and source/drain features in the MOS region and separated by the gate region. The gate region includes a fin structure and a nanowire over the fin structure. The nanowire extends from the source feature to the drain feature.
